Fabrication and Optical Properties of Pb(Mg1/3Nb2/3)O3-PbTiO3 Thin Films on Si Substrates Using the PLD Method.

Epitaxial 0.67Pb(Mg_1/3Nb_2/3)O₃-0.33PbTiO₃ (PMN-PT) thin films with electro-optic effects were fabricated on (La_0.5Sr_0.5)CoO₃(LSCO)/CeO₂/YSZ-buffered Si(001) substrates using double-pulse excitation pulsed laser deposition (PLD) method with a mask placed between the target and the substrate. Epitaxial growth of PMN-PT thin films was undertaken using the two-step growth method of PMN-PT film. The PMN-PT seed layer was deposited at 500° C on the LSCO/CeO₂/YSZ/Si, which temperature was the same as that used for LSCO de- position. The PMN-PT thin films were deposited on the PMN-PT seed layer at 600°C, which enables growth of high-crystallinity PMN-PT films with smooth surfaces. We obtained optimum fabrication conditions of PMN-PT film with micrometer-order thickness. Resultant films showed high crystallinity with full width at half maximum (FWHM) = 0.73 deg and 1.6 µm thickness. Electro-optic properties and the refractive index value were measured at 633 am wavelength using the prism coupling method. The obtained refractive index was 2.59. The electro-optic coefficients r₁₃ and r₃₃ were determined by applying the electrical field between a semitransparent, thin top electrode of Pt and a bottom LSCO electrode. The electro-optic coefficient was r₁₃ = 17 pm/V at transverse electric field (TE) mode and r₃₃ = 55 pm/V at transverse magnetic field (TM) mode. [ABSTRACT FROM AUTHOR]