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Presents information on a study which analyzed the role of dislocation-dislocation interactions on the relaxation behavior of biaxially stressed semiconductor thin films, by including interaction terms in an energy minimization. Summation of energetic terms; Choice of axes and dislocation parameters; Orthogonal interactions; Reformulation of the energy summation of misfit dislocations.

Investigates the thermal relaxation of SiGe films deposited by ultrahigh-vacuum chemical vapor deposition. Thicknesses and compositions of the films; Average linear density of misfit dislocations versus annealing time; Information on the relaxation behavior and the interaction distance.

Presents a study which investigated the thermal stability of SiGe films deposited by ultrahigh-vacuum chemical vapor deposition. Experiment details; Results and discussion; Conclusion.

Thin germanium films on SiO2 completely melted by pulsed laser irradiation cool rapidly by thermal conduction to the substrate until they solidify. In situ measurements indicate that the liquid is supercooled by 420–530 K with respect to the crystalline phase prior to solidification. Cross-sectional transmission electron microscopy reveals nucleation events at the Ge/SiO2 interface. The microstructure of these events is comprised of a very fine grained (5–15 nm) polycrystalline core with much larger grains extending laterally and toward the free surface. It is believed that nucleation of the amorphous phase, which was subsequently converted to the fine-grained material, initiated solidification. [ABSTRACT FROM AUTHOR]

Presents a correction to the paper 'The Thermal Stability of SiGe Films Deposited by Ultrahigh Vacuum Chemical Vapor Deposition,' which appeared in the 1991 issue of the 'Journal of Applied Physics.'