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Transparent conductive oxide (TCO) p-type Li-doped NiO thin films were deposited on the (0001) sapphire substrates by magnetron sputtering technique with a high purity NiO:LiO ceramic target. We systematically investigated the structural, electrical and optical properties of NiO:Li thin films annealed in different conditions. We found that annealing in different conditions greatly affects the physical properties of NiO:Li thin films. Compared with the NiO:Li thin film annealed in oxygen, the hole concentration of NiO:Li thin film annealed in nitrogen at the same processing temperature is obviously lower. Annealed in oxygen at 500 °C, NiO:Li films show excellent crystal quality with single (111) orientation, high hole concentrations. When the annealing temperature increased, the transmittance of NiO:Li thin films become better for wavelength range from ultraviolet (UV) to visible with a significant absorption edge near 350 nm. [ABSTRACT FROM AUTHOR]

• The DUV optoelectronic synapse was fabricated on the MOCVD-deposited a-GaO x film. • The information written into the bionic synapse is non-volatile. • The synapse can mimic the transition from short-term memory to long-term memory. Optoelectronic bionic synapses, integrating sensing and processing capabilities, help to break through the limitations of von Neumann structure and are promising in smart sensors, AI robots etc. fields. Here, we fabricated a deep ultraviolet (DUV) optoelectronic bionic synapse with an amorphous gallium oxide (a-GaO x) film deposited by metal–organic chemical vapor deposition (MOCVD). DUV illumination pulses could be facilely written into the bionic synapse, and the written information exhibits non-volatility. By manipulating the illumination pulse number, the pulse width, and the pulse power density, the synapse is capable of transitioning from short-term memory (STM) to long-term memory (LTM), effectively emulating the learning-memory behavior of human brains. [ABSTRACT FROM AUTHOR]

Abstract: It is well-known that there is a relatively small temperature window for the growth of epitaxial and c-axis oriented YBCO thin films by various methods. In this study, this window was more precisely examined for YBCO film growths by photo-assisted MOCVD. At specified total reactor pressure of 4.6torr, and specified respective partial pressures for the oxidizing agents, O2 and N2O at 1.7torr and 1.1torr, the film growths were tested at several substrate temperature (T s) points from 780°C to 864°C. The film growth time for each test was 3min. As to compositional purity, purity in c-axis orientation, and crystal structural quality of these tested films by using photo-assisted MOCVD technique, it was found that for the growth of purely c-axis oriented YBCO thin films with high crystalline quality, the appropriate growth temperature range (or “T s window”) was from about 800°C to 830°C, at relevant pressures as specified above. T c and J c of a typical YBCO film sample grown within this “T s window”, i.e., 810°C, were found as 90K and 1.32MA/cm2 (77K, 0Oe) respectively by magnetization measurements. It is noticeable that this film, and other purely c-axis oriented YBCO films are all single-crystal like and dense, with no SEM visible grain boundary or void. The causes of precipitates found on top surface of these c-axis oriented YBCO films are also discussed. [Copyright &y& Elsevier]

Abstract: Superconducting YBa2Cu3O7− x thin films were deposited on LaAlO3 (100) substrates by a photo-assisted metal-organic chemical vapor deposition (MOCVD) technique. In our experiment, growth temperature, chamber pressure and growth time were all fixed; the only process variable was the susceptor inclination angle (Φ) between the axis of gas inlet and the susceptor surface. It was found that the growth rate of YBCO films increases monotonically as Φ increases, whereas the superconducting critical current density (J c) has a maximum (1.2×106 A/cm2) near Φ =22.5°. The experimental results were found to be well correlated with the three-dimensional simulations of gas flow inside the MOCVD reactor, with Φ being the only process variable. [Copyright &y& Elsevier]

Abstract: Copper phthalocyanine (CuPc) thin-film transistors (TFTs) have been fabricated using spin-coated polymeric gate insulators, including polymethyl methacrylate (PMMA) and a novel poly(methylmethacrylate-co-glycidylmethacrylate) (P(MMA-co-GMA)). These devices behaved fairly well and showed satisfactory p-type electrical characteristics. The transistor with P(MMA-co-GMA) gate insulator showed higher field-effect mobility, μ FET =1.22×10−2 cm2/Vs, larger on/off current ratio, I on/I off =7×103 and lower threshold voltage, V T =−8V, compared with the transistor with PMMA gate insulator (μ FET =5.89×10−3 cm2/Vs, I on/I off =2×103 and V T =−15V). The higher mobility of CuPc on P(MMA-co-GMA) was attributed to better ordering and enhanced crystallinity within the CuPc film and the better CuPc/P(MMA-co-GMA) interface, as observed by X-ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM) measurements. The correlation between the structural properties and the device performance of CuPc films grown on different polymeric gate insulators is discussed. [Copyright &y& Elsevier]

Abstract: Zinc oxide (ZnO) thin film was grown on CaF2 (11–21) substrate by metalorganic vapor phase epitaxy (MOVPE) and the structure, surface morphology and the opto-electrical properties of the film were investigated. It was found that preferential c-axis oriented ZnO film was highly transparent and quite smooth. In photoluminescence (PL) spectrum at 10K, the neutral donor bound exciton (D0X) emission was identified at 3.362eV (I4), the neutral acceptor bound exciton (A0X) emission at 3.346eV (I9). Free A- and B-exciton emissions at 3.374eV and 3.386eV, respectively, as well as the phonon replicas of free A-exciton and D0X were also observed, indicating high optical quality of the ZnO film. Temperature-dependent PL spectra demonstrated that the free exciton emission was dominant at a temperature larger than 215K. Hall measurement showed that the ZnO/CaF2 film exhibited n-type conduction, with the resistivity of 114Ωcm and the Hall mobility of 15.7cm2/Vs. [Copyright &y& Elsevier]