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Abstract: Air-oxidation behavior of a Zr50Cu43Al7 bulk metallic glass (ZCA7-BMG) was studied over the temperature range of 400–500°C. The oxidation kinetics of the ZCA7-BMG generally followed a multiple-stage parabolic-rate law with its steady-state parabolic-rate constants (k p values) decreasing with increasing temperature, indicative of the occurrence of kinetics inversion. The scales formed on the ZCA7-BMG were strongly dependent on temperature, consisting mostly of tetragonal ZrO2 and CuO, and minor amounts of monoclinic ZrO2 and Cu2O at 400°C, while Cu2O was completely absent at T ⩾450°C. In addition, a minor amount of Al2O3 was further observed after the oxidation at 500°C, whose formation is responsible for the lowest oxidation rate, as compared to those at T ⩽450°C. [Copyright &y& Elsevier]

This paper aims to measure and simulate the warpages of 3D through-silicon via (TSV) die-stacked dynamic-random-access-memory (DRAM) packages during the manufacturing process. The related die stresses and keep-out zone (KOZ) for the stacked dies in the packages at room temperature are further calculated with the validated simulation model. The out-of-plane deformations (or warpages) of the packages from the full-field shadow moiré are documented under temperature loading and found consistent with those from finite-element method (FEM). The results of the stresses and KOZs at the proximity of a single TSV for each die in the package at room temperature are presented. It is found that the sizes of KOZs in four-die stacked DRAM packages with and without epoxy molding compound (EMC) at room temperature are dominated by the horizontal pMOS transistors and more than double the size in wafer-level die. The sizes of KOZs at each die are similar in this four-die stacked DRAM package, even though the stresses at each die are apparently different. [ABSTRACT FROM AUTHOR]