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The paper presents the two transmitter analog paths of 10 W and 400 W peak output power developed for micro- and macro-cell LTE450 base stations, respectively. Each path contains a chain of amplifiers with a final stage designed in the Doherty architecture to improve total transmitter power efficiency. The paths were optimized for linearity and efficiency considering, i.e., an output power vs. input power course shape and tuning of the amplifier's operating points while using low computational complexity MP algorithms.

This paper describes development of solid-state microwave power test system (MPTS) operating over 2.3 to 2.6 GHz with the output power level of 100 W for industrial applications in material processing, and for designing of microwave power industrial equipment. The MPTS unit consists of four major parts: PLL synthesizer, high power solid-state amplifier, detector probes for return losses and leakage measurement and microcontroller. The MPTS system is able to operate in either single fixed-frequency regime, or in swept mode with self-tuning for minimum reflection of a heated load.

In the paper a balanced high power amplifier with class A silicon bipolar transistors for L-band T/R module is described. The amplifier was designed for maximum power and minimum transmitance distortions. The obtained parameters of the amplifier are as follow: output power at 1 dB compression P1 dB > 49 dBm, linear gain |S21| > 10 dB, and transmitance deviations during the RF pulse: phase arg(S21)