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The 100 W class A power amplifier for L-band T/R module

Authors :
Wojciech Wojtasiak
Daniel Gryglewski
Edward Sędek
Source :
Journal of Telecommunications and Information Technology, Iss 1 (2002)
Publication Year :
2002
Publisher :
National Institute of Telecommunications, 2002.

Abstract

In the paper a balanced high power amplifier with class A silicon bipolar transistors for L-band T/R module is described. The amplifier was designed for maximum power and minimum transmitance distortions. The obtained parameters of the amplifier are as follow: output power at 1 dB compression P1 dB > 49 dBm, linear gain |S21| > 10 dB, and transmitance deviations during the RF pulse: phase arg(S21)

Subjects

Subjects :
modeling
MESFETs
finite difference time domain method
power transistors
microwave transistors
Telecommunication
TK5101-6720
Information technology
T58.5-58.64

Details

Language :
English
ISSN :
15094553 and 18998852
Issue :
1
Database :
Directory of Open Access Journals
Journal :
Journal of Telecommunications and Information Technology
Publication Type :
Academic Journal
Accession number :
edsdoj.3ff20a3631a74f4ea7b9bf89b87e83f4
Document Type :
article
Full Text :
https://doi.org/10.26636/jtit.2002.1.102
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