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The Fourier-series-based insulated-gate bipolar transistor (IGBT) model has been very effective in simulating its switching behaviors and meanwhile, reflecting carrier dynamics. However, in turn-on process, such a model has difficulty in distinguishing the boundary between undepleted area and depletion layer of the drift region due to Gibbs phenomenon and therefore, cannot accurately describe the carrier behavior of carrier storage region (CSR). In this study, the Fourier-series-based model is modified to determine the more precise depletion layer edge for turn on. This is achieved by utilizing the actual characteristics of the carrier concentration gradient at the edge of CSR in turn-on process. Such a modified model is implemented in MATLAB/Simulink and it can better reflect the depletion layer and simulate the distribution of both the carrier concentration and electric field during turn-on process. It corrects the unreasonable voltage tail caused by the error of drift region voltage calculation in previous models. The results of the proposed model under both the resistive load and inductive load are in good agreement with TCAD. Such a modified model can more accurately simulate both carrier dynamics and switching behaviors in the turn-on process. [ABSTRACT FROM AUTHOR]

The series connection of IGBTs is essential for high-voltage applications where fast switching performances need to be maintained. However, unbalanced voltage sharing is a major resistance to the converter application of this structure. There are a number of causes leading to voltage unbalance, such as different signal delays, parasitic parameters, tail currents, and so on. A temporary clamp scheme performed by active voltage control (AVC) has been proven to be effective in solving the unbalanced voltage-sharing issue. However, the basic physics has not been investigated. In this paper, the physical principle of voltage unbalance within IGBTs series operation is discussed. The carrier storage region differences are concluded to be the intrinsic cause of unbalanced voltage sharing. By using an accurate Fourier-series-based IGBT simulation model with appropriate assumptions, a physical explanation for temporary clamp is provided in detail. At the end of the tail current period when the excess carrier concentration becomes close to the intrinsic doping density, the temporary clamp is able to achieve satisfactory equal voltage sharing. [ABSTRACT FROM PUBLISHER]

The main idea of active voltage control (AVC) is to employ classic feedback-control methods forcing the IGBT collector voltage transient to follow a predefined trajectory. This feedback control of IGBTs has great advantages in guaranteeing that IGBTs remain in safe operating area (SOA), restricting EMI, mitigating the voltage/current stress, minimizing/predicting their power losses, and balancing voltages of IGBTs in series. Inevitably, however, AVC introduces stability issues. Based on the assumption that accurate IGBT small-signal model parameters are available, an analogue proportional-derivative and multiloop feedback control was proposed to achieve stable performance in previous work. Due to nonlinearities and uncertainties in IGBT parameters, previous stability analysis methods have important limitations. This work uses Kharitonov's theorem during the IGBT controlled turn-off to assess the system's stability and guide the AVC design to account for model uncertainties and varying parameters. We conducted experiments to investigate the system's robust stability due to these uncertainties in the IGBT parameters, which confirm the validity of the proposed theoretical analysis. With the use of wide bandwidth op-amps, it is shown that the feedback design may be simplified. [ABSTRACT FROM PUBLISHER]

High-performance power switching devices [insulated-gate bipolar transistors (IGBTs)] realize high-performance power converters. Unfortunately, with a high switching speed of the IGBT-freewheel diode chopper cell, the circuit becomes intrinsic sources of high-level electromagnetic interference (EMI). Therefore, costly EMI filters or shielding is normally demanded on the load and supply sides. An S-shaped voltage transient with a high-order time derivative eliminates the discontinuity in the switching transient and can suppress high-frequency spectrum of EMI emissions. More importantly, it provides an improved tradeoff between EMI generation and switching time, therefore switching losses. This promising tradeoff can be explored further for better high-frequency EMI suppression by using the infinitely differentiable characteristics of Gaussian S-shaped transients. However, current gate drive schemes cannot achieve the S shaping. In this paper, active voltage control is applied and improved successfully to define IGBT switching dynamics with a smoothed Gaussian waveform. [ABSTRACT FROM PUBLISHER]

Silicon carbide (SiC) bipolar junction transistors (BJTs) require a continuous base current in the on-state. This base current is usually made constant and is corresponding to the maximum collector current and maximum junction temperature that is foreseen in a certain application. In this paper, a discretized proportional base driver is proposed which will reduce, for the right application, the steady-state power consumption of the base driver. The operation of the proposed base driver has been verified experimentally, driving a 1200-V/40-A SiC BJT in a dc-dc boost converter. In order to determine the potential reduction of the power consumption of the base driver, a case with a dc-dc converter in an ideal electric vehicle driving the new European drive cycle has been investigated. It is found that the steady-state power consumption of the base driver can be reduced by approximately 60%. The total reduction of the driver consumption is 3459 J during the drive cycle, which is slightly more than the total on-state losses for the SiC BJTs used in the converter. [ABSTRACT FROM AUTHOR]

With series insulated-gate bipolar transistor (IGBT) operation, well-matched gate drives will not ensure balanced dynamic voltage sharing between the switching devices. Rather, it is IGBT parasitic capacitances, mainly gate-to-collector capacitance Cgc, that dominate transient voltage sharing. As Cgc is collector voltage dependant and is significantly larger during the initial turn-off transition, it dominates IGBT dynamic voltage sharing. This paper presents an active control technique for series-connected IGBTs that allows their dynamic voltage transition dVce/dt to adaptively vary. Both switch ON and OFF transitions are controlled to follow a predefined dVce/dt. Switching losses associated with this technique are minimized by the adaptive dv /dt control technique incorporated into the design. A detailed description of the control circuits is presented in this paper. Experimental results with up to three series devices in a single-ended dc chopper circuit, operating at various low voltage and current levels, are used to illustrate the performance of the proposed technique. [ABSTRACT FROM AUTHOR]