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A Discretized Proportional Base Driver for Silicon Carbide Bipolar Junction Transistors.
- Source :
- IEEE Transactions on Power Electronics; May2014, Vol. 29 Issue 5, p2408-2417, 10p
- Publication Year :
- 2014
-
Abstract
- Silicon carbide (SiC) bipolar junction transistors (BJTs) require a continuous base current in the on-state. This base current is usually made constant and is corresponding to the maximum collector current and maximum junction temperature that is foreseen in a certain application. In this paper, a discretized proportional base driver is proposed which will reduce, for the right application, the steady-state power consumption of the base driver. The operation of the proposed base driver has been verified experimentally, driving a 1200-V/40-A SiC BJT in a dc-dc boost converter. In order to determine the potential reduction of the power consumption of the base driver, a case with a dc-dc converter in an ideal electric vehicle driving the new European drive cycle has been investigated. It is found that the steady-state power consumption of the base driver can be reduced by approximately 60%. The total reduction of the driver consumption is 3459 J during the drive cycle, which is slightly more than the total on-state losses for the SiC BJTs used in the converter. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 08858993
- Volume :
- 29
- Issue :
- 5
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Power Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 101265993
- Full Text :
- https://doi.org/10.1109/TPEL.2013.2274331