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Abstract: Nickel oxide (NiO) thin films were prepared on glass substrates at various bias voltages using dc reactive magnetron sputtering technique. The influence of substrate bias voltage on structural, optical and electrical properties was systematically investigated using X-ray diffraction (XRD), SEM, EDS, spectrophotometer and Hall effect studies. The NiO films are crystalline with preferential growth along (200) plane. The NiO films exhibit optical transmittance of 55% and direct band gap of 3.78eV at the substrate bias voltage of −75V. The electrical resistivity decreases as substrate bias voltage increases from 0 to −75V thereafter it was slightly increased. [ABSTRACT FROM AUTHOR]

Abstract: Mo-doped In2O3 thin films have been prepared on glass substrates using an activated reactive evaporation method and systematically studied the effect of oxygen partial pressure on the structural, optical, electrical and photoluminescence properties of the films. The obtained films are highly transparent and conductive. The films exhibited the lowest electrical resistivity of 5.2×10−4 Ωcm, with an average optical transmittance of 90% in the visible region. An intensive photoluminescence emission peaks were observed at 415 and 440nm. [Copyright &y& Elsevier]

Abstract: Nanostructured Zn1− x Mn x S films (0⩽ x ⩽0.25) were deposited on glass substrates by simple resistive thermal evaporation technique. All the films were deposited at 300K in a vacuum of 2×10−6 m bar. All the films temperature dependence of resistivity revealed semiconducting behaviour of the samples. Hot probe test revealed that all the samples exhibited n-type conductivity. The nanohardness of the films ranges from 4.7 to 9.9GPa, Young’s modulus value ranging 69.7–94.2GPa. [Copyright &y& Elsevier]

Abstract: Transparent and high conductive molybdenum doped indium oxide (IMO) thin films have been deposited on glass substrates by activated reactive evaporation. The effect of substrate temperature on the structure, surface morphology, electrical, optical and photoluminescence properties of these films were systematically examined and it was found that crystallinity and growth orientation of the films were significantly influenced by substrate temperature. In addition the films exhibited a low electrical resistivity of 5.2×10−4 Ωcm with an optical transmittance 90% in the visible region of the solar spectrum at a substrate temperature of 573K. Intensive blue PL bands at 415 and 440nm were observed in the photoluminescence spectrum at room temperature. [Copyright &y& Elsevier]

Nanocrystalline Zn1-xMnxS films (x=0.04, 0.08 and 0.12) were deposited on glass substrates at 400 K using a simple resistive thermal evaporation technique. All the deposited films were characterized by chemical, structural, morphological, optical and magnetic properties. Scanning electron microscopy and atomic force microscopy studies showed that all the films investigated were in nanocrystalline form with the grain size lying in the range 10–20 nm. All the films exhibited cubic structure and the lattice parameters increase linearly with composition. The absorption edge shifted from the higher-wavelength region to lower wavelengths with increase in Mn concentration. The magnetization increased sharply with increase of the Mn content up to x=0.08 and then decreased with further increase of the Mn content. Particularly, Zn0.92Mn0.08S concentration samples show a weak ferromagnetic nature, which might be the optimum concentration for optoelectronic and spintronic device applications. [ABSTRACT FROM AUTHOR]