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We present a theoretically investigation about the electron transport through a single-barrier structures in HgTe/CdTe quantum wells (QWs) with inverted band structure. For HgTe/CdTe QWs structure, the transmission probabilities show great dependence on the Rashba spin–orbit interaction (RSOI), the incident angle, the incident Fermi energy and the electric modulation potential. By tuning the modulation amplitude with gate voltage or the strength of RSOI modulation, the efficient spin-polarized P Z = 1 is achieved, which is formed due to the spin-split in band spectrum induced by the RSOI modulation. This electric mechanism provides us a way to manipulate the spin polarization electrically and convenient for experimental verification. [ABSTRACT FROM AUTHOR]

We present a theoretically investigation about the electron transport through a single-barrier structures in HgTe/CdTe quantum wells (QWs) with inverted band structure. For HgTe/CdTe QWs structure, the transmission probabilities show great dependence on the Rashba spin–orbit interaction (RSOI), the incident angle, the incident Fermi energy and the electric modulation potential. By tuning the modulation amplitude with gate voltage or the strength of RSOI modulation, the efficient spin-polarized P Z = 1 is achieved, which is formed due to the spin-split in band spectrum induced by the RSOI modulation. This electric mechanism provides us a way to manipulate the spin polarization electrically and convenient for experimental verification. [ABSTRACT FROM AUTHOR]

Electron tunneling through a single magnetic barrier in a HgTe topological insulator has been theoretically investigated. We find that the perpendicular magnetic field would not lead to spin-flip of the edge states due to the conservation of the angular moment. By tuning the magnetic field and the Fermi energy, the edge channels can be transited from switch-on states to switch-off states and the current from unpolarized states can be filtered to fully spin polarized states. These features offer us an efficient way to control charge/spin transport in a HgTe/CdTe quantum well, and pave a way to construct the nanoelectronic devices utilizing the topological edge states. [ABSTRACT FROM AUTHOR]