Spin-polarized charge transport through a single barrier in HgTe/CdTe heterostructure interface.

We present a theoretically investigation about the electron transport through a single-barrier structures in HgTe/CdTe quantum wells (QWs) with inverted band structure. For HgTe/CdTe QWs structure, the transmission probabilities show great dependence on the Rashba spin–orbit interaction (RSOI), the incident angle, the incident Fermi energy and the electric modulation potential. By tuning the modulation amplitude with gate voltage or the strength of RSOI modulation, the efficient spin-polarized P Z = 1 is achieved, which is formed due to the spin-split in band spectrum induced by the RSOI modulation. This electric mechanism provides us a way to manipulate the spin polarization electrically and convenient for experimental verification. [ABSTRACT FROM AUTHOR]