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Recently developed semiempirical potential energy functions for the Ga-As-Si and Ga-As-Al systems have been applied here to determine the excess formation energy for GaAs clusters on GaAs(00-1), AlAs(00-1), Si(001), and one atomic layer As-covered Si(001) substrates as a function of cluster size and cluster shape by the Monte Carlo technique. Pyramidal type ledges on the GaAs clusters are found to be the favored ledge for the first three layers while an inverted-pyramidal type ledge is also favored in certain cases for the As1/Si(001) substrate. Cluster formation at ledges is compared with cluster formation on a flat terrace for the Si(001) and the As1/Si(001) substrates.

Semiempirical potential energy functions have been utilized for a variety of calculations in the Ga-Al-As system. Surface energies have been calculated for several orientations of GaAs. Ledge energies for the GaAs (0 0 -1) (As-terminated) surface show long-range interaction effects with the ledge energy increasing with spacing. GaAs (001)/AlAs (001) superlattices have been simulated for a range of interlayer spacings with the excess interfacial energy per interlayer increasing from 5 erg/sq cm at an interlayer spacing of 1 molecular layer (5.8 A) to 50 erg/sq cm at an interlayer spacing of 18 molecular layers (103.8 A).

Both strip and triangular clusters, composed of 2 -1 -1 line ledges, have been simulated on the Si (111) surface. The long-range ledge-ledge interaction and the surface stress tensor distribution have been evaluated for these two pill-box geometries using a semiempirical potential-energy function that incorporates both two-body and three-body contributions. The consequences of the ledge-ledge interaction on two-dimensional nucleation for Si (111) has been evaluated as a function of Si adatom supersaturation and shown to differ significantly from conventional theory, where such interaction is neglected.

Using a computer simulation technique with a semiempirical potential, a Si crystal was cleaved along the (111) plane. The pi-bonded chain structural features of the Si(111) cleavage surface are observed and found to be a consequence of the dynamics of this cleavage process and seem not to be influenced by the final energetics.

All the investigations which were performed employed in one way or another a computer simulation technique based on atomistic level considerations. In general, three types of simulation methods were used for modeling systems with discrete particles that interact via well defined potential functions: molecular dynamics (a general method for solving the classical equations of motion of a model system); Monte Carlo (the use of Markov chain ensemble averaging technique to model equilibrium properties of a system); and molecular statics (provides properties of a system at T = 0 K). The effects of three-body forces on the vibrational frequencies of triatomic cluster were investigated. The multilayer relaxation phenomena for low index planes of an fcc crystal was analyzed also as a function of the three-body interactions. Various surface properties for Si and SiC system were calculated. Results obtained from static simulation calculations for slip formation were presented. The more elaborate molecular dynamics calculations on the propagation of cracks in two-dimensional systems were outlined.

The general aim of this investigation was to study interface stability and solute segregation phenomena during crystallization of a model system. Emphasis was to be placed on direct observational studies partly because this offered the possibility at a later stage of performing related experiments under substantially convection-free conditions in the space shuttle. The major achievements described in this report are: (1) the development of a new model system for fundamental studies of crystal growth from the melt and the measurement of a range of material parameters necessary for comparison of experiment with theory. (2) The introduction of a new method of measuring segregation coefficient using absorption of a laser beam by the liquid phase. (3) The comparison of segregation in crystals grown by gradient freezing and by pulling from the melt. (4) The introduction into the theory of solute segregation of an interface field term and comparison with experiment. (5) The introduction of the interface field term into the theories of constitutional supercooling and morphological stability and assessment of its importance.