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Free surfaces and multilayer interfaces in the GaAs/AlAs system

Authors :
Choi, D. K
Takai, T
Erkoc, S
Halicioglu, T
Tiller, W. A
Source :
Journal of Crystal Growth. 85(1-2)
Publication Year :
1987
Publisher :
United States: NASA Center for Aerospace Information (CASI), 1987.

Abstract

Semiempirical potential energy functions have been utilized for a variety of calculations in the Ga-Al-As system. Surface energies have been calculated for several orientations of GaAs. Ledge energies for the GaAs (0 0 -1) (As-terminated) surface show long-range interaction effects with the ledge energy increasing with spacing. GaAs (001)/AlAs (001) superlattices have been simulated for a range of interlayer spacings with the excess interfacial energy per interlayer increasing from 5 erg/sq cm at an interlayer spacing of 1 molecular layer (5.8 A) to 50 erg/sq cm at an interlayer spacing of 18 molecular layers (103.8 A).

Subjects

Subjects :
Solid-State Physics

Details

Language :
English
ISSN :
00220248
Volume :
85
Issue :
1-2
Database :
NASA Technical Reports
Journal :
Journal of Crystal Growth
Notes :
NCC2-297, , MDA903-85-K-0100
Publication Type :
Report
Accession number :
edsnas.19880031500
Document Type :
Report
Full Text :
https://doi.org/10.1016/0022-0248(87)90198-9