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Free surfaces and multilayer interfaces in the GaAs/AlAs system
- Source :
- Journal of Crystal Growth. 85(1-2)
- Publication Year :
- 1987
- Publisher :
- United States: NASA Center for Aerospace Information (CASI), 1987.
-
Abstract
- Semiempirical potential energy functions have been utilized for a variety of calculations in the Ga-Al-As system. Surface energies have been calculated for several orientations of GaAs. Ledge energies for the GaAs (0 0 -1) (As-terminated) surface show long-range interaction effects with the ledge energy increasing with spacing. GaAs (001)/AlAs (001) superlattices have been simulated for a range of interlayer spacings with the excess interfacial energy per interlayer increasing from 5 erg/sq cm at an interlayer spacing of 1 molecular layer (5.8 A) to 50 erg/sq cm at an interlayer spacing of 18 molecular layers (103.8 A).
- Subjects :
- Solid-State Physics
Subjects
Details
- Language :
- English
- ISSN :
- 00220248
- Volume :
- 85
- Issue :
- 1-2
- Database :
- NASA Technical Reports
- Journal :
- Journal of Crystal Growth
- Notes :
- NCC2-297, , MDA903-85-K-0100
- Publication Type :
- Report
- Accession number :
- edsnas.19880031500
- Document Type :
- Report
- Full Text :
- https://doi.org/10.1016/0022-0248(87)90198-9