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Provides information on a study examining the 200-nm-thick polycrystalline silicon films were deposited by changing the deposition temperature (Td = 150-750...C). Methodology used to conduct the study; Incorporation of O and N atoms depending on Td; Findings of the study.

Investigates the structure of polycrystalline silicon (Si) films prepared from amorphus silicon deposited using disilane. Factor attributed to the increase in the transmission electron microscopy size; Effects of post-hydrogenation on the poly-Si films; Description of structural properties.

Studies the structure and grain boundary defects of glow-discharge polycrystalline silicon films deposited using disilane. Deposition of poly-silicon films using monosilane; Significance of polycrystalline silicon films as a material for thin-film transistors; Examination of the morphology by means of x-ray diffraction using a diffractometer.

Presents a study which investigated the stress in plasma-enhanced chemical vapor deposition hydrogenated amorphous silicon nitrogen[subx] films. Experimental details; Results and discussion; Conclusion.

Reports on the relationship between the stress and bonding properties of amorphous SiN[subx]:H films. Deposition of amorphous SiN[subx]:H films on single crystal silicon; Significance of amorphous SiN[subx]:H films deposited by plasma-enhanced chemical vapor deposition; Densities of the SiH and NH bonds.

Presents a study that prepared undoped polycrystalline silicon films on a fused quartz substrate as a function of the radio frequency power and deposition temperature by a plasma-enhanced chemical vapor deposition method. Details of the experiment; Results and discussion; Conclusion.

Presents information on a study which discussed changes of the structural and electrical properties brought about by an in situ plasma supply during growth of undoped and boron doped low-pressure chemical vapor deposition poly-silicon film and plasma-enhanced chemical vapor deposition films. Structural property; Effects of plasma supply on improvement of the surface roughness; Electrical property.

Amorphous silicon oxynitride, a-SiOxNy, layers were prepared by nitridation of 7-nm thick thermally grown silicon dioxide, a-SiO2, layers on n-type crystalline Si substrates, in NH3 plasma with different temperatures (TP=300–500 °C). The compositional and structural properties for the a-SiOxNy layers were examined using current–voltage (I–V), capacitance–voltage (C–V), electron spin resonance (ESR), Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy and Fourier transform infrared measurements. We found a strong correlation between the change in the ESR spin density and that in the C–V characteristics with varying TP. These results were interpreted as indicating a change in the compressive strain. The I–V characteristics showed that the breakdown strength monotonically decreased with increasing TP. In the distribution of the constituent atoms, the AES profiles were roughly independent of TP. The changes in the 800 and 1070 cm−1 IR absorption bands were also examined based on those in the compressive strain, as well as a proposal for interpreting the ESR and C–V results. [Copyright &y& Elsevier]