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Relationship between electrical properties and structure in uniaxially oriented polycrystalline silicon films.

Authors :
Hasegawa, S.
Arai, M.
Kurata, Y.
Source :
Journal of Applied Physics; 2/1/1992, Vol. 71 Issue 3, p1462, 7p, 10 Graphs
Publication Year :
1992

Abstract

Presents a study that prepared undoped polycrystalline silicon films on a fused quartz substrate as a function of the radio frequency power and deposition temperature by a plasma-enhanced chemical vapor deposition method. Details of the experiment; Results and discussion; Conclusion.

Details

Language :
English
ISSN :
00218979
Volume :
71
Issue :
3
Database :
Complementary Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
7651519
Full Text :
https://doi.org/10.1063/1.351239