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Presents a Raman study that has been performed, under resonant conditions, on a gallium arsenide bevelled-edge layer grown on a silicon substrate to characterize the optical and crystalline properties of the epilayer near the interface. Geometrical characteristics of the sample; Establishment of a theoretical expression for the Raman intensities profile; Absorption coefficient of the gallium-arsenic layer.

Presents a study in which raman and photoluminescence spectroscopies are used to characterize crystalline quality and interfacial strain in heterostructures. Effect of biaxial stress on electronic and vibronic energies; Measurement of gallium arsenide grown on silicon by molecular-beam epitaxy; Enhancement of the sensitivity of the Raman probe.

Describes a technique for preparing silicon substrates in molecular-beam epitaxy systems devoted to III-V compound growth. Use of Auger electron spectrometry and reflection high-energy electron diffraction; Advantages of the proposed technique.

Investigates the nucleation of gallium arsenide (GaAs) on silicon (Si) in molecular-beam epitaxy by Auger electron spectrometry and reflection high-energy electron diffraction. Restoration of stoichiometry and monocrystallinity; Description of the initial stages of GaAs/Si growth.