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The effects of doping profile and well thickness on the light extinction properties of electroabsorption modulators (EAM) are studied experimentally. It is found that both light p type doping in the InP cladding layer and a large well thickness help to get higher extinction ratios at a given reverse bias voltage. A 3D EAM model has been built for optimizing the performance of EAMs. The simulation results are in a good agreement with the experimental results. With the optimized EAM designs, a modulator with an over 20 dB extinction ratio at a low bias voltage is demonstrated. [ABSTRACT FROM AUTHOR]

We report the simulation and experimental results of 1.3-μm InGaAsP/InP multiple quantum well (MQW) electro-absorption modulators (EAMs). In this work, the quantum confined Stark effect of the EAM is systematically analyzed through the finite element method. An optimized structure of the 1.3-μm InGaAsP/InP QW EAM is proposed for applications in 100 G ethernet. Then 1.3-μm InGaAsP/InP EAMs with f−3 dB bandwidth of over 20 GHz and extinction ratio over 20 dB at 3 V bias voltage are demonstrated. [ABSTRACT FROM AUTHOR]