Analysis and optimization of 1.5-μm InGaAsP/InP MQWs electroabsorption modulator.

The effects of doping profile and well thickness on the light extinction properties of electroabsorption modulators (EAM) are studied experimentally. It is found that both light p type doping in the InP cladding layer and a large well thickness help to get higher extinction ratios at a given reverse bias voltage. A 3D EAM model has been built for optimizing the performance of EAMs. The simulation results are in a good agreement with the experimental results. With the optimized EAM designs, a modulator with an over 20 dB extinction ratio at a low bias voltage is demonstrated. [ABSTRACT FROM AUTHOR]