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Electroluminescence from GaInSb/AlGaInSb type I quantum well diode lasers, grown on GaAs, has been investigated as a function of strain in the quantum wells. Lasing was observed, in pulsed operation, up to temperatures of 161, 208, 219, and 202 K for structures containing 0.55%, 0.62%, 0.78%, and 1.1% strain, respectively, with lasing occurring at ∼3.3 μm at 200 K for the 1.1% structure. [ABSTRACT FROM AUTHOR]

Photoluminescence (PL) from GaInSb/AlInSb type I multi-quantum-wells, grown on GaAs, has been investigated as a function of strain in the quantum wells. Luminescence, between 3 and 4 μm, was observed for all samples, with good agreement between the measured and calculated peak emission energies. Analysis of the temperature dependence of the luminescence suggests that population of excited quantum well hole subbands occurs at high temperature, leading to a reduction in the PL signal. Room temperature luminescence was obtained from a sample with ∼0.8% strain in the quantum wells. Preliminary results from laser diodes fabricated from companion wafers indicate lasing up to 220 K. [ABSTRACT FROM AUTHOR]

The realization of midinfrared GaInSb/AlGaInSb type I quantum well diode lasers grown on GaAs is reported. Lasing was observed up to 95 K, at an emission wavelength of ∼3.5 μm, threshold current density of 115 A/cm2, and with a characteristic temperature T0∼51 K. [ABSTRACT FROM AUTHOR]

The properties of InSb/AlxIn1-xSb quantum-well light-emitting diodes have been investigated as a function of temperature from 300 to 15 K. Over the whole range, the peak emission occurred at significantly higher energies than the band gap of InSb but below the band gap of the AlxIn1-xSb barriers, confirming that emission is from the quantum wells. Maximum internal quantum efficiencies of 65% and 85% were measured at 15 K for diodes containing 40 and 20 nm quantum wells, respectively. [ABSTRACT FROM AUTHOR]

Lateral light emitting diodes have been fabricated in InSb/AlxIn1-xSb quantum wells using a simple bevel etching technique. The peak in emission was found to be in the range of 4-5 μm, confirming that the emission was from the quantum well. [ABSTRACT FROM AUTHOR]

The luminescent properties of single InSb quantum wells have been investigated as a function of temperature and incident laser power. A large peak was observed in the photoluminescence, corresponding to emission from the quantum well, which moves to lower energy with increasing temperature and tracks the bulk InSb band gap with a constant energy up-shift of ∼50 meV. The integrated photoluminescence intensity was observed to fall with increasing temperature, with a well defined activation energy of 17 meV at high temperatures, and to be proportional to the square of the excitation intensity. [ABSTRACT FROM AUTHOR]

We have investigated the room-temperature electroluminescent properties of InSb/AlxIn1-xSb quantum-well light-emitting diodes. The maximum emission from diodes containing quantum wells occurred at significantly higher energies than the band gap of InSb. Close agreement between experimental and theoretical data confirms that recombination occurs within the quantum well. [ABSTRACT FROM AUTHOR]

Efficiency droop in InSb/AlxIn1-xSb quantum-well light-emitting diodes has been investigated as a function of temperature for devices containing 20 nm, 40 nm, and 100 nm wide quantum well active regions. The amount of droop is greatest at low temperatures in device with the widest wells. [ABSTRACT FROM AUTHOR]

Simulation results and fabrication details are presented for a two-dimensional photonic crystal membrane defect cavity for use as a laser in gas sensing and communications applications in the 3-4 um wavelength range. The design is based on a modified L3 cavity in an aluminium-indium-gallium-antimonide membrane structure which contains two strained quantum wells. Peak emission is predicted at l = 3.372 um with a Q factor of 26 233 for an optimized membrane thickness of 1000 nm. A focused ion beam procedure is described for creating the membrane directly in a Fabry-Perot laser structure. A 400 nm thick membrane is fabricated and the photonic crystal pattern is etched into the membrane. [ABSTRACT FROM AUTHOR]