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Efficiency droop in InSb/AlInSb quantum-well light-emitting diodes.
- Source :
-
Applied Physics Letters . 1/7/2013, Vol. 102 Issue 1, p011127-011127-4. 1p. 1 Diagram, 3 Graphs. - Publication Year :
- 2013
-
Abstract
- Efficiency droop in InSb/AlxIn1-xSb quantum-well light-emitting diodes has been investigated as a function of temperature for devices containing 20 nm, 40 nm, and 100 nm wide quantum well active regions. The amount of droop is greatest at low temperatures in device with the widest wells. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 102
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 84738282
- Full Text :
- https://doi.org/10.1063/1.4773182