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In this letter, we report a mid-wavelength infrared (MWIR) planar photodetector based on InAs/InAs1−xSbx type-II superlattices (T2SLs) that has a cut-off wavelength of 4.3 μm at 77 K. The superlattice for the device was grown by molecular beam epitaxy while the planar device structure was achieved by Zinc diffusion process in a metal–organic chemical vapor deposition reactor. At 77 K, the peak responsivity and the corresponding quantum efficiency had the value of 1.42 A/W and 48% respectively at 3.7 μm under −20 mV for the MWIR planar photodetector. At 77 K, the MWIR planar photodetector exhibits a dark current density of 2.0 × 10−5 A/cm2 and the R0A value of ~3.0 × 102 Ω∙cm2 under −20 mV, which yielded a specific detectivity of 4.0 × 1011 cm·Hz1/2/W at 3.7 μm. At 150 K, the planar device showed a dark current density of 6.4 × 10−5 A/cm2 and a quantum efficiency of 49% at ~3.7 μm under −20 mV, which yielded a specific detectivity of 2.0 × 1011 cm·Hz1/2/W. [ABSTRACT FROM AUTHOR]

In this Letter, we report the demonstration of zinc ion-implantation to realize planar mid-wavelength infrared photodetectors based on type-II InAs/InAs1−xSbx superlattices. At 77 K, the photodetectors exhibit a peak responsivity of 0.68 A/W at 3.35 μm, corresponding to a quantum efficiency of 23.5% under Vb = −80 mV, without anti-reflection coating; these photodetectors have a 100% cutoff wavelength of 4.28 μm. With an R0 × A value of 1.53 × 104 Ω cm2 and a dark current density of 1.23 × 10−6 A/cm2 under an applied bias of −80 mV at 77 K, the photodetectors exhibit a specific detectivity of 9.12 × 1011 cm·Hz1/2/W. [ABSTRACT FROM AUTHOR]

We report a Zn-diffused planar mid-wavelength infrared photodetector based on type-II InAs/InAs1−xSbx superlattices. Both the superlattice growth and Zn diffusion were performed in a metal-organic chemical vapor deposition system. At 77 K, the photodetector exhibits a peak responsivity of 0.70 A/W at 3.65 μm, corresponding to a quantum efficiency of 24% at zero bias without anti-reflection coating, with a 50% cutoff wavelength of 4.28 μm. With an R0A value of 3.2 × 105 Ω cm2 and a dark current density of 9.6 × 10−8 A/cm2 under an applied bias of −20 mV at 77 K, the photodetector exhibits a specific detectivity of 2.9 × 1012 cm Hz1/2/W. At 150 K, the photodetector exhibits a dark current density of 9.1 × 10−6 A/cm2 and a quantum efficiency of 25%, resulting in a detectivity of 3.4 × 1011 cm Hz1/2/W. [ABSTRACT FROM AUTHOR]

A high operating temperature mid-wavelength infrared pBn photodetector based on the type-II InAs/InAsSb superlattice on a GaSb substrate has been demonstrated. At 150 K, the photodetector exhibits a peak responsivity of 1.48 A/W, corresponding to a quantum efficiency of 47% at −50 mV applied bias under front-side illumination, with a 50% cutoff wavelength of 4.4 µm. With an R × A of 12 783 Ω cm2 and a dark current density of 1.16 × 10−5 A/cm2 under −50 mV applied bias, the photodetector exhibits a specific detectivity of 7.1 × 1011 cm Hz1/2/W. At 300 K, the photodetector exhibits a dark current density of 0.44 A/cm2 and a quantum efficiency of 39%, resulting in a specific detectivity of 2.5 × 109 cm Hz1/2/W. [ABSTRACT FROM AUTHOR]

By introducing a double barrier design, a high performance InAs/InAsSb type-II superlattice mid-wavelength infrared photodetector has been demonstrated. The photodetector exhibits a cut-off wavelength of ~4.50 µm at 150 K. At 150 K and −120 mV applied bias, the photodetector exhibits a dark current density of 1.21 × 10−5 A/cm2, a quantum efficiency of 45% at peak responsivity (~3.95 µm), and a specific detectivity of 6.9 × 1011 cm·Hz1/2/W. The photodetector shows background-limited operating temperature up to 160 K. [ABSTRACT FROM AUTHOR]

In this letter, we report the demonstration of a pBn planar mid-wavelength infrared photodetectors based on type-II InAs/InAs1−xSbx superlattices, using silicon ion-implantation to isolate the devices. At 77 K the photodetectors exhibited peak responsivity of 0.76 A/W at 3.8 µm, corresponding to a quantum efficiency, without anti-reflection coating, of 21.5% under an applied bias of +40 mV with a 100% cut-off wavelength of 4.6 µm. With a dark current density of 5.21 × 10−6 A/cm2, under +40 mV applied bias and at 77 K, the photodetector exhibited a specific detectivity of 4.95 × 1011 cm·Hz1/2/W. [ABSTRACT FROM AUTHOR]