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Mid-wavelength infrared high operating temperature pBn photodetectors based on type-II InAs/InAsSb superlattice.
- Source :
-
AIP Advances . Feb2020, Vol. 10 Issue 2, p1-5. 5p. - Publication Year :
- 2020
-
Abstract
- A high operating temperature mid-wavelength infrared pBn photodetector based on the type-II InAs/InAsSb superlattice on a GaSb substrate has been demonstrated. At 150 K, the photodetector exhibits a peak responsivity of 1.48 A/W, corresponding to a quantum efficiency of 47% at −50 mV applied bias under front-side illumination, with a 50% cutoff wavelength of 4.4 µm. With an R × A of 12 783 Ω cm2 and a dark current density of 1.16 × 10−5 A/cm2 under −50 mV applied bias, the photodetector exhibits a specific detectivity of 7.1 × 1011 cm Hz1/2/W. At 300 K, the photodetector exhibits a dark current density of 0.44 A/cm2 and a quantum efficiency of 39%, resulting in a specific detectivity of 2.5 × 109 cm Hz1/2/W. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 21583226
- Volume :
- 10
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- AIP Advances
- Publication Type :
- Academic Journal
- Accession number :
- 142010932
- Full Text :
- https://doi.org/10.1063/1.5136501