1. Influence of arsenic during indium deposition on the formation of the wetting layers of InAs quantum dots grown by migration enhanced epitaxy.
- Author
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Song, J. D., Park, Y. M., Shin, J. C., Lim, J. G., Park, Y. J., Choi, W. J., Han, I. K., Lee, J. I., Kim, H. S., and Park, C. G.
- Subjects
ARSENIC ,INDIUM ,QUANTUM dots ,SEMICONDUCTORS ,EPITAXY ,PHOTOLUMINESCENCE - Abstract
We compared the structural and optical properties of InAs/GaAs quantum dots grown by migration enhanced epitaxy, with and without arsenic, during indium deposition. The uniformity and size of the quantum dots are enhanced in a sample without arsenic. As a result, narrower and longer wavelength photoluminescence is observed in this sample. Furthermore, the thickness of the wetting layers is reduced by ∼20% in the sample without arsenic, and this result agrees well with the speculation that metallic indium has a smaller driving force for corrugating the InAs wetting layers before they are transformed from two-dimensional to three-dimensional layers. Additionally, the photoluminescence linewidth of the sample without arsenic is insensitive to the cryostat temperature due to two major factors: the reduced thickness of the wetting layers and the enhanced uniformity. In the sample with arsenic, however, the photoluminescence linewidth shows typical anomalies. [ABSTRACT FROM AUTHOR]
- Published
- 2004
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