Search

We investigated metal-organic vapor phase epitaxy grown (InGa)(AsSb)/GaAs/GaP Stranski–Krastanov quantum dots (QDs) with potential applications in QD-Flash memories by cross-sectional scanning tunneling microscopy (X-STM) and atom probe tomography (APT). The combination of X-STM and APT is a very powerful approach to study semiconductor heterostructures with atomic resolution, which provides detailed structural and compositional information on the system. The rather small QDs are found to be of truncated pyramid shape with a very small top facet and occur in our sample with a very high density of ∼4 × 1011 cm−2. APT experiments revealed that the QDs are GaAs rich with smaller amounts of In and Sb. Finite element (FE) simulations are performed using structural data from X-STM to calculate the lattice constant and the outward relaxation of the cleaved surface. The composition of the QDs is estimated by combining the results from X-STM and the FE simulations, yielding ∼InxGa1 − xAs1 − ySby, where x = 0.25–0.30 and y = 0.10–0.15. Noticeably, the reported composition is in good agreement with the experimental results obtained by APT, previous optical, electrical, and theoretical analysis carried out on this material system. This confirms that the InGaSb and GaAs layers involved in the QD formation have strongly intermixed. A detailed analysis of the QD capping layer shows the segregation of Sb and In from the QD layer, where both APT and X-STM show that the Sb mainly resides outside the QDs proving that Sb has mainly acted as a surfactant during the dot formation. Our structural and compositional analysis provides a valuable insight into this novel QD system and a path for further growth optimization to improve the storage time of the QD-Flash memory devices.

Cross-sectional scanning tunneling microscopy (X-STM) was employed to characterize the InAs submono-layer quantum dots (SMLQDs) grown on top of a Si-doped GaAs(001) substrate in the presence of (2×4) andc(4×4) surface reconstructions. Multiple layers were grown under different conditions to study their effectson the formation, morphology, and local composition of the SMLQDs. The morphological and compositionalvariations in the SMLQDs were observed by both filled and empty-state imaging. A detailed analysis of indiumsegregation in the SMLQD layers was described by fitting the local indium-concentration profile with a standardsegregation model. We observed a strong influence of the arsenic flux over the indium incorporation andformation of the SMLQDs. We investigated the well-width fluctuations of the InGaAs quantum well in which theSMLQDs were formed. The well-width fluctuations were small compared to the more pronounced compositionfluctuations in all the layers. The lateral compositional variations lead to the formation of indium-rich clusterswhich can act as quantum dots and yield charge-carrier confinement.

Recent theories proposed a deep revision of the well-known expression for the Purcell factor, with counterintuitive effects, such as complex modal volumes and non-Lorentzian local density of states. We experimentally demonstrate these predictions in tailored coupled cavities on photonic crystal slabs with relatively low optical losses. Near-field hyperspectral imaging of quantum dot photoluminescence is proved to be a direct tool for measuring the line shape of the local density of states. The experimental results clearly evidence non-Lorentzian character, in perfect agreement with numerical and theoretical predictions. Spatial maps with deep subwavelength resolution of the real and imaginary parts of the complex mode volumes are presented. The generality of these results is confirmed by an additional set of far-field and time-resolved experiments in cavities with larger modal volume and higher quality factors.

Optical localization in strongly disordered photonic media is an attractive topic for proposing novel cavity-like structures. Light interference can produce random modes confined within small volumes, whose spatial distribution in the near-field is predicted to show hot spots at the nanoscale. However, these near-field speckles have not yet been experimentally investigated due to the lack of a high spatial resolution imaging techniques. Here, we study a system where the disorder is induced by random drilling air holes in a GaAs suspended membrane with internal InAs quantum dots. We perform deep-subwavelength near-field experiments in the telecom window to directly image the spatial distribution of the electric field intensity of disordered-induced localized optical modes. We retrieve the near-field speckle patterns that extend over few micrometers and show several single speckles of the order of λ/10 size. The results are compared with the numerical calculations and with the recent findings in the literature of disordered media. Notably, the hot spots of random modes are found in proximity of the air holes of the disordered system., This work was supported by the FET project FP7 618025 CARTOON. This work is part of the research programme of the Foundation for Fundamental Research on Matter (FOM), which is financially supported by the Netherlands Organisation for Scientific Research (NWO), and it is also supported by the Dutch Technology Foundation STW, applied science division of NWO, the Technology Program of the Ministry of Economic Affairs under Project No. 10380. F.B. acknowledges funding from the Italian Ministry for Education, University and Research within the Futuro in Ricerca (FIRB) program (project DeLIGHTeD, Protocollo RBFR12RS1W).

Quantum photonic integrated circuits (QPICs) on a GaAs platform allow the generation, manipulation, routing, and detection of non-classical states of light, which could pave the way for quantum information processing based on photons. In this article, the prototype of a multi-functional QPIC is presented together with our recent achievements in terms of nanofabrication and integration of each component of the circuit. Photons are generated by excited InAs quantum dots (QDs) and routed through ridge waveguides towards photonic crystal cavities acting as filters. The filters with a transmission of 20% and free spectral range ≥66 nm are able to select a single excitonic line out of the complex emission spectra of the QDs. The QD luminescence can be measured by on-chip superconducting single photon detectors made of niobium nitride (NbN) nanowires patterned on top of a suspended nanobeam, reaching a device quantum efficiency up to 28%. Moreover, two electrically independent detectors are integrated on top of the same nanobeam, resulting in a very compact autocorrelator for on-chip g(2)(τ) measurements.

We experimentally demonstrate the control over the emission of quantum dots embedded in photonic molecules via mode field modulation. By locally changing the cavity frequencies we control, and even suppress, spontaneous emission.

Quantum dots (QDs) interacting with confined light fields in photonic crystal cavities represent a scalable light source for the generation of single photons and laser radiation in the solid-state platform. The complete control of light-matter interaction in these sources is needed to fully exploit their potential, but it has been challenging due to the small length scales involved. In this work, we experimentally demonstrate the control of the radiative interaction between InAs QDs and one mode of three coupled nanocavities. By non-locally moulding the mode field experienced by the QDs inside one of the cavities, we are able to deterministically tune, and even inhibit, the spontaneous emission into the mode. The presented method will enable the real-time switching of Rabi oscillations, the shaping of the temporal waveform of single photons, and the implementation of unexplored nanolaser modulation schemes.

We report a systematic study of the In-assisted deoxidation (IAD) of epitaxial GaAs(100) substrates. Optimized IAD conditions resulting in a pit-free and smooth GaAs surface are found. Photoluminescence lines from single quantum dots (QDs) with linewidths in the range of 250–400 µeV are observed from low-density InAs QDs grown at a distance of 10 nm from a GaAs surface deoxidized under an optimized condition. Our study shows that IAD is very promising for application in the growth of nanostructures on patterned GaAs substrates.

A single quantum dot deterministically coupled to a photonic crystal environment constitutes an indispensable elementary unit to both generate and manipulate single-photons in next-generation quantum photonic circuits. To date, the scaling of the number of these quantum nodes on a fully integrated chip has been prevented by the use of optical pumping strategies that require a bulky off-chip laser along with the lack of methods to control the energies of nano-cavities and emitters. Here, we concurrently overcome these limitations by demonstrating electrical injection of single excitonic lines within a nano-electro-mechanically tuneable photonic crystal cavity. When an electrically driven dot line is brought into resonance with a photonic crystal mode, its emission rate is enhanced. Anti-bunching experiments reveal the quantum nature of these on-demand sources emitting in the telecom range. These results represent an important step forward in the realization of integrated quantum optics experiments featuring multiple electrically triggered Purcell-enhanced single-photon sources embedded in a reconfigurable semiconductor architecture.

We demonstrate the independent lithographic mode tuning by changing the holes around the defect area of photonic crystal nanocavities containing light-emitting quantum dots. The data have been verified by the three-dimensional finite-difference time domain simulation. These findings can be applied to realize encoded particles with large coding capability (>105) for biosensing.

We report a systematic theoretical and experimental investigation of the polarization properties of columnar quantum dots (CQDs) with extremely large aspect ratio and high compositional contrast. A strong variation of the polarization of the dominant interband transitions as a function of the CQD composition and aspect ratio is predicted by the theory and observed experimentally. In optimized InAs CQDs grown on GaAs, dominant emission and lasing is obtained in the transverse-magnetic polarization, which shows the potential of this approach for polarization-independent amplifiers on GaAs.

We present eight-band k.p calculations of the electronic and polarization properties of columnar Inz Ga1-z As quantum dots (CQD) with high aspect ratio embedded in an Inx Ga1-x As/GaAs quantum well. Our model accounts for the linear strain effects, linear piezoelectricity, and spin-orbit interaction. We calculate the relative intensities of transverse-magnetic (TM) and transverse-electric (TE) linear polarized light emitted from the edge of the semiconductor wafer as a function of the two main factors affecting the heavy hole-light hole valence band mixing and hence, the polarization dependent selection rules for the optical transitions, namely, (i) the composition contrast z/x between the dot material and the surrounding well and (ii) the dot aspect ratio. The numerical results show that the former is the main driving parameter for tuning the polarization properties. This is explained by analyzing the biaxial strain in the CQD, based on which it is possible to predict the TM to TE intensity ratio. The conclusions are supported by analytical considerations of the strain in the dots. Finally, we present the compositional and geometrical conditions to achieve polarization independent emission from InGaAs/GaAs CQDs. © 2010 American Institute of Physics. U7 - Export Date: 2 August 2010 U7 - Source: Scopus U7 - Art. No.: 073509

Using a pump-probe differential transmission experiment in heterodyne detection, we measured the refractive index dynamics at the ground-state excitonic transition in electrically pumped InAs/GaAs quantum-dot amplifiers emitting near 1.3 µm at room temperature. We compare three samples differing only in the level of p-doping, and interpret the measured index changes taking into account the gain dynamics in these devices. We find that in absorption, the excess hole density due to p-doping accelerates the recovery and reduces the refractive index change, since filling of the hole states by p-doping shifts the induced changes in the hole population toward high energy states. Conversely, in gain, the reduced electron reservoir in the excited states in p-doped devices results in slower gain recovery dynamics and in larger refractive index changes compared to undoped devices operating at the same modal gain. The linewidth enhancement factor inferred from these measurements shows that p-doping is effective in reducing this parameter mainly due to the larger differential gain in p-doped devices in the gain regime. © 2009 IEEE.

We unveil the role of bound-to-continuum photoexcitation of carriers as a relevant process that affects the performance of quantum dot (OD) lasers. We present the response of an InAs/InGaAs QD laser to a sub-band gap pump, showing an unexpected depletion of the emitted photons. We relate this observation with carrier photoexcitation through additional transmission and photocurrent measurements. We provide a theoretical support to the experimental data and highlight the important role of this process in the laser characteristics.

We report a novel, fully-integrated nanophotonic wavelength and displacement sensor based on an electrostatically-actuated double-membrane photonic crystal nanocavity detector with a quantum dot absorption region.

Using a differential transmission pump-probe experiment in heterodyne detection, the ultrafast gain and refractive-index dynamics of the ground-state transition in InAs/GaAs quantum- dot amplifiers emitting near 1.3 mum at working condition, that is at room temperature and under electrical injection were measured. An ultrafast gain recovery on a subpicosecond time scale is observed at high electrical injection indicating fast carrier relaxation into the dot ground state, which is appealing for high-speed applications with these devices. Comparing p-doped and undoped devices of otherwise identical structure and operating at the same gain, a faster absorption recovery but a slower gain dynamics in p-doped amplifiers was observed. This finding should help in elucidating the role of p-doping in the design of QD-based devices with high-speed performances.

We reported the growth of asymmetric InAs bilayer quantum dots (QD) on GaAs substrate by molecular beam epitaxy. A combination of different InAs growth rates (GR) for the two QD layers was used, respectively, to increase QD density and extend photoluminescence (PL) emission wavelength. A high GR used for the first layer guarantees a high QD density; while a low GR used for the second layer helps to extend the PL emission wavelength due to the dot size increase, which was confirmed by transmission electron microscopy and PL measurements. It was found that this kind of QDs is very sensitive to post-growth annealing procedure due to the dot size increase. By appropriately choosing the growth parameters, InAs bilayer QD laser diodes embedded in a conventional AlGaAs/GaAs waveguide structure were demonstrated. The devices yielded the lowest ever reported threshold current density of 134 A/cm 2 in the range of 1.5 μm wavelength for GaAs-based lasers.

High-power broadband superluminescent diodes (SLDs) emitting in the 1.2-1.3-?m region are demonstrated using InAs-GaAs quantum dots (QDs). The highest output powers of ?30-50 mW are achieved using 18 QD layers with p-doped GaAs spacers. At these high powers the device operates in a regime of broad bandwidth (?100 nm) with a spectral dip of ?5 dB between two separate peaks originated by the QD ground and excited states. Spectral calculations performed with a traveling-wave rate equation model show excellent agreement with the experimental data and provide design rules for optimizing the output spectrum. SLD characteristics are presented for two different device structures consisting of tilted and bent waveguides. The latter allows the achievement of higher output powers at lower currents. The coherence properties and the temperature characteristics are also discussed in detail. © 2007 IEEE

The growth of InAs columnar quantum dots (CQDs) on GaAs substrates by MBE was studied. The CQDs were formed by depositing a 1.8 monolayer (ML) InAs seed dot layer and a short period GaAs/InAs superlattice (SL). The growth of the CQDs is very sensitive to growth interruption (GI) and growth temp. Both longer GI and higher growth temp. impact the size dispersion of the CQDs, which causes the broadening of photoluminescence (PL) spectrum and the presence of the addnl. PL peak tails. By properly choosing the GI and the growth temp., CQDs including GaAs (3 ML)/InAs (0.62 ML) SL with period no. up to 35 without plastic relaxation were grown. The corresponding equiv. thickness of the SL is 41 nm which is two times higher than the theor. crit. thickness of the strained InGaAs layer with the same av. In compn. of 16%. The increase of the crit. thickness is partially assocd. with the formation of the CQDs. Based on a five-stack CQD active region, laser diodes emitting around 1120 nm at room temp. were demonstrated, indicating a high material quality. CQDs with nearly isotropic cross section (20 nm*20 nm dimensions) were formed by depositing a 16-period GaAs (3 ML)/InAs (0.62 ML) SL on an InAs seed dot layer, indicating the feasibility of artificial shape engineering of QDs. Such a structure is expected to be very promising for polarization insensitive device applications, such as semiconductor optical amplifiers. [on SciFinder (R)]

We theoretically investigate the multipolar effects on the dipole-forbidden transitions of a semiconductor quantum dot. An approximated expression for the decay rate of these transitions is derived. Unlike the general theory of the spontaneous emission beyond the dipole approximation, the distinct roles of the emitter and the vacuum electric field in the transition rate are here clearly recognizable and can be separately optimized. We illustrate the potential of this formalism by calculating the spontaneous emission decay rate of an InAs/GaAs quantum dot embedded into two realistic nanostructures---an L3 photonic crystal cavity and a plasmonic dimer antenna. The obtained results show that, although the two structures provide an enhancement of the same order of magnitude, the plasmonic antenna constitutes a more promising candidate for the experimental observation of the dipole-forbidden transitions of a quantum dot.

We demonstrate the control of the spontaneous emission rate of single InAs quantum dots embedded in a double-membrane photonic crystal cavity by the electromechanical tuning of the cavity resonance. Controlling the separation between the two membranes with an electrostatic field we obtain the real-time spectral alignment of the cavity mode to the excitonic line and we observe an enhancement of the spontaneous emission rate at resonance. The cavity has been tuned over 13 nm without shifting the exciton energies. A spontaneous emission enhancement of 4.5 has been achieved with a coupling efficiency of the dot to the mode 92%., Comment: 4 pages, 3 figures

We report the all-electrical control over cavity-emitter systems, consisting in Stark-tunable quantum dots embedded in mechanically reconfigurable photonic crystal membranes. Purcell-effect from a single dot is demonstrated at distinct wavelengths.

We report the full energy control over a semiconductor cavity-emitter system, consisting of single Stark-tunable quantum dots embedded in mechanically reconfigurable photonic crystal membranes. A reversible wavelength tuning of the emitter over 7.5 nm as well as an 8.5 nm mode shift are realized on the same device. Harnessing these two electrical tuning mechanisms, a single exciton transition is brought on resonance with the cavity mode at several wavelengths, demonstrating a ten-fold enhancement of its spontaneous emission. These results open the way to bring several cavity-enhanced emitters mutually into resonance and therefore represent a key step towards scalable quantum photonic circuits featuring multiple sources of indistinguishable single photons.

We report the control over the spontaneous emission of energy-tunable quantum emitters embedded in passive waveguide circuits, realized by coupling Stark-tunable quantum dots to electromechanically-compliant photonic crystal molecules.

Solid-state cavity quantum electrodynamics systems will form scalable nodes of future quantum networks, allowing the storage, processing and retrieval of quantum bits, where a real-time control of the radiative interaction in the cavity is required to achieve high efficiency. We demonstrate here the dynamic molding of the vacuum field in a coupled-cavity system to achieve the ultrafast nonlocal modulation of spontaneous emission of quantum dots in photonic crystal cavities, on a timescale of ~200 ps, much faster than their natural radiative lifetimes. This opens the way to the ultrafast control of semiconductor-based cavity quantum electrodynamics systems for application in quantum interfaces and to a new class of ultrafast lasers based on nano-photonic cavities., Comment: 15 pages, 4 figures

We report direct evidence of enhanced spontaneous emission in a photonic crystal light-emitting diode (LED) at telecom wavelength (lambda similar to 1300 nm). This result is crucial to obtain an electrically driven single photon source with high extraction efficiency. This kind of devices can be used for different types of applications in emerging fields like quantum key distribution, quantum information technology as well as in fundamental studies on quantum electrodynamics. In this work we present a device which combines a photonic crystal nanocavity with InAs quantum dots (QDs) and an LED, leading to cavity-enhanced emission at telecom wavelengths under electrical injection. The fabrication process, based on e-beam lithography and additive and subtractive processes, is described in detail. A well-isolated emission peak at about 1300 nm from the PhC mode electrically pumped is obtained (Q similar to 4000), and the enhancement of the spontaneous emission rate (similar to 1.5 fold) is clearly evidenced by time-resolved electroluminescence measurements. (C) 2008 Elsevier B.V. All rights reserved.

Coupling the emitted light from single quantum dots into an optic fiber has been demonstrated as a. plug and play' single-photon Source. In this work, lifetime dynamics measurements were performed with two time-delayed femtosecond optical pulses at different wavelengths. When the energy of the Pumping light is less than the energy of the wetting layer (i.e. quasi-resonant excitation), the single-photon sources can be operated at a speed of 1 GHz. (C) 2008 Elsevier Ltd. All rights reserved.

We directly investigate, by means of near-field spectroscopy, the spatial distribution of the optical cavity modes of 2D photonic crystal microcavities. Numerical simulations confirm that the photoluminescence maps of quantum dots embedded in the photonic structure qualitatively match the spatial modulation of the electric field intensity. (C) 2007 Elsevier B.V. All rights reserved.

We report a study of single quantum dots inside photonic crystal cavities with a low-temperature scanning near-field optical microscope. The spatial maps of single excitonic lines from the quantum dot show the clear signature of coupling to the cavity modes for small detunings. We also show that the near-field tip can be used to control the exciton-photon coupling at the nanoscale. A general framework for the interpretation of near-field maps of single emitters in cavities is proposed.

We report the electromechanical control of spontaneous emission of single InAs quantum dots (QDs) embedded in wavelength-tunable double-membrane photonic crystal cavities (PCC). The tuning is achieved by modulating the distance between two parallel GaAs membranes by applying electrostatic forces across a p-i-n diode under reverse bias. The spontaneous emission rate of single dots has been modified by over a factor of ten, tuning the cavity reversibly between on- and offresonant conditions without altering the emission energy of the dots. We also discuss a possible approach to integrate the double membrane structure with ridge waveguides, for the transmission of light within a photonic chip.

Photonic crystal (PhC) cavities made in broadband luminescent material offer attractive possibilities for flexible active devices. The luminescence enables the cavity to operate as an autonomous entity. New applications of this property are demonstrated for cavities made in the InGaAsP underetched semiconductor membrane with embedded InAs Quantum Dots that emit in the range of 1400-1600 nm. Planar photonic crystal membrane nanocavities were released from the parent chip by mechanical nanomanipulation. The released cavity particle could be bonded on an arbitrary surface, which was exploited to make a novel fiber-optic tip sensor with a PhC cavity attached to the tip. A single mode from a short cavity is shown to couple simultaneously to at least three cavity modes of a long cavity, as concluded from level anticrossing data when the small cavity was photothermally tuned. Reconfigurable and movable cavities were created by locally varying the infiltration status by liquid oil near a PhC waveguide or defect cavity. Liquid was displaced locally on a micron scale using capillary force effects or laser-induced evaporation and condensation phenomena.

We demonstrate tunable on-chip single photon sources using the Stark tuning of single quantum dot (QD) excitonic transitions in short photonic crystal waveguides (PhC WGs). The emission of single QDs can be tuned in real-time by 9 nm with an applied bias voltage less than 2V. Due to a reshaped density of optical modes in the PhC WG, a large coupling efficiency \beta>65% to the waveguide mode is maintained across a wavelength range of 5 nm. When the QD is resonant with the Fabry-Perot mode of the PhC WG, a strong enhancement of spontaneous emission is observed leading to a maximum coupling efficiency \beta=88%. These results represent an important step towards the scalable integration of single photon sources in quantum photonic integrated circuits., Comment: 15 pages, 5 figues

A revisited realization of the Young’s double slit experiment is introduced to directly probe the photonic mode symmetry by photoluminescence experiments. We experimentally measure the far field angular emission pattern of quantum dots embedded in photonic molecules. The experimental data well agree with predictions from Young’s interference and numerical simulations. Moreover, the vectorial nature of photonic eigenmodes results in a rather complicated parity property for different polarizations, a feature which has no counterpart in quantum mechanics.

The authors experimentally investigate the effects of atomic layer deposition (ALD) and laser-assisted oxidation on the optical modes in GaAs L3 photonic crystal air-bridge cavities, using layers of InAs quantum dots as internal light source. Four distinct optical mode peaks are observed in the photonic bandgap and they show different wavelength-redshifts (0-6.5 nm) as the photonic crystal surface is coated with an Al2O3 layer (0-5.4 nm thick). Numerical finite-difference time-domain (FDTD) simulations can well-reproduce the experimental result and give insight into the origin of the shifts of modes with different spatial profiles. By combining the ALD coating with in situ laser-assisted oxidation, we are able to both redshift and blueshift the optical modes and we attribute the blueshift to the formation of a GaAs-oxide at the expense of GaAs at the interface between GaAs and the Al2O3 layer. This result can be quantitatively reproduced by including a GaAs-oxide layer into the FDTD model. Selective etching experiments, confirm that this GaAs-oxide layer is mainly at the interface between GaAs and Al2O3 layers. (C) 2011 American Institute of Physics. [doi:10.1063/1.3559269]

Liquid crystal (LC, Merk 5 CB) is infiltrated into active, InAs quantum dots embedded, InGaAsP membrane type nanocavities to investigate the possible effect of the LC orientation on active cavity tuning. The tuning is demonstrated thermally and thermo-optically. The thermal tuning showed that the cavity modes can be tuned in opposite directions and exhibits a sudden change at the clearing temperature. The mechanism relies on the existence of both ordinary and extraordinary refractive indices of the liquid crystal due to its molecular alignment inside the voids. It shows that the electric field distribution of cavity modes can have a substantial component parallel to the LC director. The average electric field orientation with respect to the LC orientation can be mode dependent, so that different modes can be dominated by either branch of the LCs refractive index. Thermo-optic tuning of the modes is obtained when the power of the excitation laser is increased from 40 ?W to 460 ?W. A large and a reversible blueshift of more than 10 nm of the cavity modes is observed which is attributed to temperature induced liquid transport. InGaAsP type of nanocavities, without InAs quantum dots were infiltrated with PbSe colloidal quantum dots to obtain a comparison of internal light sources either in the semiconductor or in the holes.

The sensitivities of resonant wavelengths of photonic crystal (PhC) membrane nanocavities with embedded InAs quantum dots to the ambient refractive index are reported for use in (bio) chemical sensing. The resonances for the different modes of several point-defect type cavities are obtained by photoluminescence measurements. Systematic trends of the variation of sensitivity with increase of the overlap of the modes with the PhC holes are observed for varying cavity type as well as for a given mode within a cavity type. A maximum sensitivity of approximately 300 nm/RIU (refractive index unit) is observed, corresponding to approximately 25% mode overlap with the holes and complete infiltration with the aqueous solution.

International audience; We demonstrate the coupling of a single InAs/InP quantum dash, emitting around 1.55 μm, to a slow-light mode in a two-dimensional photonic crystal on Bragg reflector. These surface addressable 2.5D photonic crystal band-edge modes present the advantages of a vertical emission and the mode area and localization may be controlled, leading to a less critical spatial alignment with the emitter. An increase in the spontaneous emission rate by a factor of 1.5–2 is measured at low temperature and is compared to the Purcell factor predicted by three-dimensional time domain electromagnetic simulations.

InAs Columnar Quantum Dash (CQDash) structures on (100) InP for polarization insensitive semiconductor optical amplifiers have been realized. Photoluminescence and electroluminescence measurements confirm a strong relationship between the polarization degree of the emission and the orientation of the CQDashes. The polarization properties of the CQDash emission could thus be changed from predominantly transverse electric to transverse magnetic by adjusting the dash orientation relative to the light propagation axis.

Single quantum dots embedded inside a photonic crystal diode are studied as a function of the reverse bias. The applied electric field strongly enhances the emission from excitonic lines as compared to the background emission. ©2009 Optical Society of America. U7 - Export Date: 2 August 2010 U7 - Source: Scopus U7 - Art. No.: 5226000

The authors demonstrate a sample method to achieve local tuning of optical modes in GaAs photonic crystal nanocavities by continuous wave laser-assisted oxidation in air atmosphere. By irradiation with a focused laser beam at power levels of a few tells of milliwatts, photonic crystal nanocavity modes shift to shorter wavelengths by Lip to 2.5 nm. The mode shifts call be controlled either by varying the laser power or by iterating laser-assisted oxidation steps and are well explained by finite-element-method and finite-difference time-domain simulations. This method provides a simple route to achieve fine spectral tuning of individual nanocavities for photonic devices. (C) 2009 American Institute of Physics [doi: 10 1063/1.3262961]

Hexagonal symmetry InGaAsP membrane type cavities with embedded InAs quantum dots as active emitters were investigated by room temperature photoluminescence experiments at wavelengths near 1.50 μm. Cavities consisting of simple defects of just removing one or seven air holes were studied as well as modified cavities with additional holes decreased in size and shifted in position. The latter include the H0 cavity, in which only two adjacent holes were modified, but none removed. Low-Q cavity modes were observed for the simple cavities while high-Q modes were observed after modification of the surrounding holes. The resonant frequencies were varied over a large range of lithographic parameters both by changing the lattice spacing or the size of the modified holes. More than 15 nm reversible dynamic optical tuning of the resonance modes was observed by changing the applied laser power up to 5 mW. For thermo-optic tuning, this corresponds to a heating of up to 200 °C.

We have compared the gain dynamics of the ground state excitonic transition between undoped and p-doped electrically-pumped InGaAs quantum-dot optical amplifiers, for temperatures from 300K to 20K. A pump-probe differential transmission technique in heterodyne detection with sub-picosecond time resolution was used. The comparison shows that in the gain regime at high temperatures the recovery dynamics of the p-doped sample is slower than in the undoped device operating at the same modal gain, due to a reduced electron reservoir in the excited states. Conversely, at 20K the initial gain dynamics is faster in the p-doped device due to hole-hole scattering. © 2009 SPIE.

We demonstrate the control of polarization and dipole moment in semiconductor nanostructures, through nanoscale engineering of shape and composition. Rodlike nanostructures, elongated along the growth direction, are obtained by molecular beam epitaxial growth. By varying the aspect ratio and compositional contrast between the rod and the surrounding matrix, we rotate the polarization of the dominant interband transition from transverse-electric to transverse-magnetic, and modify the dipole moment producing a radical change in the voltage dependence of absorption spectra. This opens the way to the optimization of quantum dot amplifiers and electro-optical modulators. © 2009 American Institute of Physics.

International audience; We demonstrate the feasibility and flexibility of artificial shape engineering of epitaxial semiconductor nanostructures. Novel nanostructures including InGaAs quantum rods (QRs), nanocandles, and quantum dots (QDs)-in-rods were realized on a GaAs substrate. They were formed by depositing a short-period GaAs/InAs superlattice (SL) on a seed QD layer by molecular beam epitaxy growth. The InAs layer thickness in the SL plays an important role in obtaining the QRs. The growth of the QRs is very sensitive to growth interruption and growth temperature. By properly choosing both growth parameters, QRs with length of 41 nm corresponding to an extremely large aspect ratio of 4.1 were obtained. The evolution from a 0-D to 1-D confinement type is evidenced in the optical properties. The origin of the optical transitions from the QRs was understood by calculations of the electronic states within a fully 3-D approach in the eight-band k ⋅ p approximation. The QRs are embedded in a GaAs matrix and are therefore free from surface traps. This feature enables high material quality and consequently their application in real devices. At room temperature, laser diodes based on QR active regions lasing around 1120 (or 1130) nm are demonstrated.

The possibility of electrical pumping of a single QD and the integration of such a device in an opto-electronic circuit would be a fundamental step towards achieving an ldquoon demandrdquo single photon source. In this paper we describe the fabrication process and preliminary results of a Light Emitting Diode (LED) integrated with a photonic crystal (PhC) nanocavity on a GaAs membrane. We demonstrate effective electric pumping of the QDs embedded into the membrane by contacting the doped layers (p and n) of the thin membrane, and the excitation of cavity modes of the PhC nanocavity fabricated on it at telecom wavelength.

The optical study of single quantum dashes located inside a 2.5D photonic crystal structure is performed. The enhancement of the emission is observed for quantum dash in resonance with a slow Bloch mode.

InAs quantum dots emitting at 1.3 Jµm and located inside a photonic crystal membrane nanocavity are studied by electrical pumping. An increase of the recombination rate is observed for quantum dots in resonance with the cavity mode.

We apply artificial shape engineering of epitaxial semiconductor nanostructures to demonstrate InGaAs quantum rods (QRs), nanocandles, and quantum dots-in-rods on a GaAs substrate. The evolution of the QRs from a zero-dimensional to one-dimensional confinement is evidenced by systematically measuring the photoluminescence and photoluminescence decay as a function of the rod length. Lasers based on a three-stack QR active region are demonstrated at room temperature, validating the applicability of the QRs in the real devices. (C) 2008 American Institute of Physics.

We report direct evidence of enhanced spontaneous emission in a photonic crystal (PhC) light-emitting diode. The device consists of p-i-n heterojunction embedded in a suspended membrane, comprising a layer of self-assembled quantum dots. Current is injected laterally from the periphery to the center of the PhC. A well-isolated emission peak at 1300nm from the PhC cavity mode is observed, and the enhancement of the spontaneous emission rate is clearly evidenced by time-resolved electroluminescence measurements, showing that our diode switches off in a time shorter than the bulk radiative and nonradiative lifetimes, Comment: 10 pages

Here we report the growth and the characterization of pillar microcavities, constituted by Bragg mirrors, which are composed by alternate layers of GaAs and aluminum oxide. The selective oxidation of the AlAs layers allowed to increase the refraction index mismatch between the GaAs and AlAs. As a consequence we obtained high reflectivity Bragg mirrors even with only three layers, a factor three less than usually necessary in the more common GaAs/AlAs Bragg reflectors. This not only simplifies the growth process, but also gives a reduction of the cavity mode volume. We have examined several MESAs with pillar diameter ranging from 1 to 10 mm, containing a system of InAs quantum dots. The quality factors of the cavities range from Q = 600–2000. Enhancement of the spontaneous emission rate of QDs was observed when the emission is on resonance with cavity modes. Purcell factors up to 2 were measured. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)