In-assisted deoxidation of GaAs substrates for the growth of single InAsGaAs quantum dot emitters

We report a systematic study of the In-assisted deoxidation (IAD) of epitaxial GaAs(100) substrates. Optimized IAD conditions resulting in a pit-free and smooth GaAs surface are found. Photoluminescence lines from single quantum dots (QDs) with linewidths in the range of 250–400 µeV are observed from low-density InAs QDs grown at a distance of 10 nm from a GaAs surface deoxidized under an optimized condition. Our study shows that IAD is very promising for application in the growth of nanostructures on patterned GaAs substrates.