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The structural evolution in fiber-textured Ti/Si thin films are investigated by in situ x-ray diffraction, in a temperature range preceding the formation of silicide compounds. The findings show that by combining ex situ strain studies with analysis of the Si local environment in the whole Ti silicide family from Ti5Si3 to TiSi2, it is possible to determine the stress-free lattice parameters of annealed films.

Influence of segregation on the measurement of stress in thin films is discussed. Surface relaxation could induce erroneous bulk stress.

The local and average texture of thick polycrystalline CdTe films is determined before, upon, and after the coalescence of the initially isolated islands, using electron backscattered diffraction and x-ray powder diffraction. The coalescence and postcoalescence processes lead to a preferential texturation, initially along the <531> and <100> crystallographic directions and then along the <110> preferred orientation. The selection of grain orientation during the film growth is found to be driven by strain energy minimization. A model for the microyield stress is developed when plasticity is confined to each elemental grain and accounts for the <531> and <100> preferred orientations. On the contrary, when plastic deformation can propagate from one grain to its neighbors, the Hall–Petch model applies and leads to the <110> preferred orientation. Furthermore, at the end of growth, the stronger <111> preferred orientation is observed and arises because of kinetic limitations. [ABSTRACT FROM AUTHOR]

The experiments of stress arising during solid-state reaction between a Pd thin film and a Si (001) substrate are put forth. The experiments give reliable information of silicide growth kinetics, elastic constants and the stress buildup in the silicide.

Residual strains and interfacial mixing affects were evaluated in Au/Ni multilayers.