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Photovoltaic (PV) systems can generate less energy than expected owing to inefficiency of the inverter, deterioration of the PV modules or conditions of partial shading and soiling. The monitoring and diagnosis techniques of PV systems are therefore quite important to recognize the causes of the performances reduction and optimize the PV energy production. For a more in-depth diagnostic capability, it would be necessary to know the short-circuit current (Isc) and the open-circuit voltage (Voc) of the PV system. These quantities are indeed useful to recognize non-uniform operating conditions of the PV modules (partial shadings, malfunctions, generic electro-optical mismatch conditions), estimate the PV module junction temperature and the voltage temperature coefficient. However, so far, these quantities cannot be measured by the inverter in operative conditions. With this contribution we propose and test a new electronic interface for a more advanced diagnostics of the PV system to be easily installed between the PV string and the inverter, able to measure the values of Isc and Voc as well as the inverter voltage, current and power working points, avoiding any downtime of the PV system and minimizing the power losses during the diagnosis activity. [ABSTRACT FROM AUTHOR]

[Display omitted] • InGaP/AlInGaP top solar cells are successfully coupled to luminescent concentrators. • The introduction of Al in InGaP determines a blue-shift and a peak narrowing of EQE. • In AlInGaP cells for LSCs, EQE can be optimized by improving base contribution. • Base layer contribution to EQE is dominant if InGaP is replaced by AlInGaP. • MOCVD-grown III-V semiconductors coupled to LSCs are promising in BIPV. The employment of Luminescent Solar Concentrators (LSCs) is a well known strategy for the integration of photovoltaic technologies in buildings. One of the main challenges in this area lies in the developement of effective solar cells, whose band gap and structures are adjusted to match the emisson peak of the related LSCs. The cells are placed at the edges of the concentrator plate and should be designed to benefit of quasi-monochromatic irradiation. In this work we investigate the growth and characterization of high-efficiency (Al)InGaP-based solar cells designed to be coupled with LSCs: their performance is evaluated upon variation of their structure and composition and compared with Si cell efficiency. In particular, by EQE theoretical simulations, we evidence how InGaP structures optmized for LSCs differ from those to be used under direct solar spectrum. Results obtained not only unveil the characteristics for an improved performance of the cells, but also represent an advance in the elucidation of the behaviour of InGaP-based devices in LSCs for future optimization. [ABSTRACT FROM AUTHOR]