MOCVD growth and characterization of high efficiency (Al)InGaP solar cells for luminescent concentrators.

[Display omitted] • InGaP/AlInGaP top solar cells are successfully coupled to luminescent concentrators. • The introduction of Al in InGaP determines a blue-shift and a peak narrowing of EQE. • In AlInGaP cells for LSCs, EQE can be optimized by improving base contribution. • Base layer contribution to EQE is dominant if InGaP is replaced by AlInGaP. • MOCVD-grown III-V semiconductors coupled to LSCs are promising in BIPV. The employment of Luminescent Solar Concentrators (LSCs) is a well known strategy for the integration of photovoltaic technologies in buildings. One of the main challenges in this area lies in the developement of effective solar cells, whose band gap and structures are adjusted to match the emisson peak of the related LSCs. The cells are placed at the edges of the concentrator plate and should be designed to benefit of quasi-monochromatic irradiation. In this work we investigate the growth and characterization of high-efficiency (Al)InGaP-based solar cells designed to be coupled with LSCs: their performance is evaluated upon variation of their structure and composition and compared with Si cell efficiency. In particular, by EQE theoretical simulations, we evidence how InGaP structures optmized for LSCs differ from those to be used under direct solar spectrum. Results obtained not only unveil the characteristics for an improved performance of the cells, but also represent an advance in the elucidation of the behaviour of InGaP-based devices in LSCs for future optimization. [ABSTRACT FROM AUTHOR]