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The paper offers a survey on recent advances in the technological platforms for photonic integrated optical transceivers and innovative transmission techniques supporting the capacity increase of optical networks, in view of forthcoming 5G requirements. Both indium phosphide (InP) and silicon (Si) platforms are considered, highlighting the most significant advantages of the two technologies and reporting on reference implementations of high-speed transmitters and receivers. Techniques to increase transmission capacity are discussed, with a goal to satisfy the specific and demanding constraints existing in the different optical network segments in terms of capacity, optical reach, maximum tolerated latency, and implementation cost. Finally, perspectives of the developed networks are addressed, focusing on techno-economic aspects and multivendor interoperability. [ABSTRACT FROM PUBLISHER]

Operating principle for a flip-flop memory cell based on erbium-doped devices is presented. A complete model for memory dynamics is introduced taking into account, at the same time, for memory writing, reading, and erasing. Simple equations are found relating writing, spontaneous and stimulated erasing times to device physical parameters, signals wavelength and power. In principle, for example, increasing writing and erasing energies at the appropriate wavelength it is possible to dramatically reduce transition times. Extinction ratio (ER) is also determined as a function of host medium, and signals properties. An optimization technique is proposed for erasing signal design in order to guarantee maximum ER. Numerical example are provided for Er and Er-Yb doped fibers whose doping ion density isp = 1.1413·1024 ions/m³, and 2.0·1025 ions/m³, respectively. Finally, an experimental demonstration giving an Er higher than 5 and 16 dB for the two fibers, respectively, is provided and discussed. [ABSTRACT FROM AUTHOR]

A silicon microring modulator for ON-OFF keying intensity modulation is presented and experimentally characterized. Modulation operation is based on carrier depletion effect in a p-n junction. The resonance wavelength shift is measured for bias voltages in the range between 0 and -7 V and modulation is demonstrated by employing electrical signals with data rates of 25 and 30 Gb/s and peak-to-peak voltage of 3.75 V. Performance in terms of bit error rate as a function of the optical signal-to-noise ratio for point-to-point transmission over 10 km of single mode fiber at both the data rates is experimentally evaluated, manifesting to be suitable for short- and medium-reach optical interconnects applications. [ABSTRACT FROM PUBLISHER]

The Photonics in Switching Conference was held in Florence, Italy, in September 2015. The Conference was exciting, with a large number of original works invited and presented. The Convitto della Calza cloister stimulated many fruitful discussions carried out, even when walking towards social events inside the extraordinary context of the city of Florence, with its rich history, art, and culture. All the attendees enjoyed a traditional collegial atmosphere of the Photonics in Switching Conference. Although this special section is not a proceeding of the conference, the idea for a Special Issue on this topic was devised in the program committee. The role of photonic technologies and techniques has grown in the past few decades within the optical networks scenario. At the same time, system and subsystem innovative solutions, together with novel network segments and architectures, represent the building blocks in the Internet of Things era: communication and connection everywhere, any time, at high quality, low cost, low power consumption, and low environmental impact. This is the ambition of the Photonics in Switching Conference, and this Special Section is evidence of the strong efforts that the scientific community has made in the field. [ABSTRACT FROM PUBLISHER]