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Erbium-Based Photonic Flip-Flop Memories: Model and Experimental Validation.
- Source :
-
IEEE Journal of Quantum Electronics . May2008, Vol. 44 Issue 5, p473-479. 7p. 1 Black and White Photograph, 1 Diagram, 8 Graphs. - Publication Year :
- 2008
-
Abstract
- Operating principle for a flip-flop memory cell based on erbium-doped devices is presented. A complete model for memory dynamics is introduced taking into account, at the same time, for memory writing, reading, and erasing. Simple equations are found relating writing, spontaneous and stimulated erasing times to device physical parameters, signals wavelength and power. In principle, for example, increasing writing and erasing energies at the appropriate wavelength it is possible to dramatically reduce transition times. Extinction ratio (ER) is also determined as a function of host medium, and signals properties. An optimization technique is proposed for erasing signal design in order to guarantee maximum ER. Numerical example are provided for Er and Er-Yb doped fibers whose doping ion density isp = 1.1413·1024 ions/m³, and 2.0·1025 ions/m³, respectively. Finally, an experimental demonstration giving an Er higher than 5 and 16 dB for the two fibers, respectively, is provided and discussed. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189197
- Volume :
- 44
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- IEEE Journal of Quantum Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 32574362
- Full Text :
- https://doi.org/10.1109/JQE.2007.914297