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The redshift (∼54 meV) of the photoluminescence (PL) peak energy of blue InGaN/GaN light-emitting diodes exposed to 60Co γ-rays was observed. Time-resolved PL indicates that the PL radiative time increases along with irradiation does. The temperature-dependent PL and photoreflectance techniques show that γ-ray irradiance leads to higher carrier localization energies and larger Stokes' shift, respectively. These facts suggest that the redshifts of the PL peak emission introduced by γ-ray irradiance mainly originated from the enhancement of indium fluctuation. The cathodoluminescent images of the samples before and after γ-ray irradiation are compared to verify the results. [ABSTRACT FROM AUTHOR]

A photoreflectance (PR) and photoluminescence (PL) study has been performed on a Si-doped epitaxial GaN layer that contains impurity or defect related below band gap features in its PR spectrum. In the 300 K PR spectrum, these features appear at energies of 3.26 and 3.33 eV, respectively, but below 180 K they can no longer be seen. The 3.26 eV line evidently corresponds to a donor acceptor pair transition, also seen in PL. The origin of the 3.33 eV line is uncertain, but may correspond to a transition involving the nitrogen vacancy. [ABSTRACT FROM AUTHOR]

Photoluminescence (PL) and optical gain (OG) spectra of a-plane GaN layers have been analyzed over a wide range of excitation intensities. The samples were fully coalesced layers grown by metalorganic chemical vapor deposition over r-plane sapphire substrates using epitaxial layer overgrowth (ELOG) and selective area lateral epitaxy (SALE) procedures. ELOG and SALE a-plane samples showed a strong stimulated emission line in backscattering-geometry PL spectra along with extremely high OG coefficient values (in SALE samples more than 2000 cm-1). Structures prepared with natural cleaved facet cavities based on these films were used to demonstrate optically pumped room-temperature lasing. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Polarization effects have been studied in GaN/AlGaN multiple quantum wells (MQWs) with different c-axis orientation by means of excitation-dependent photoluminescence (PL) analysis. Quantum structures were grown on [0001]-oriented sapphire substrates (C plane) and single-crystalline [1&1macr;00]-oriented freestanding GaN (M plane) using the metalorganic chemical vapor deposition technique. Strong PL spectrum line blueshifts (up to 140 meV) which are correlated with the excitation intensity have been obtained for C-plane MQWs, whereas no shift has been observed for M-plane MQWs. Theoretical calculations and comparison with the PL data confirm that the built-in electric field for C-plane structures is much stronger than the field present for M-plane MQWs. In the former case, the excitation-induced blueshift of the PL line is due to the screening of the built-in electric field by photoinjected carriers, which is consistent with the field strength of 1.23 MV/cm in the absence of excitation. [ABSTRACT FROM AUTHOR]

Time-resolved photoluminescence (PL) dynamics has been studied in AlInGaN/AlInGaN multiple quantum wells (MQWs) grown by a pulsed metalorganic chemical vapor deposition (PMOCVD) procedure. The PL decay kinetics was found to be sensitive to the emission energy and temperature. The PL decay time increases with decreasing emission energy, which is a characteristic of localized carrier/exciton recombination due to alloy fluctuations. Its temperature dependence shows radiative recombination to be the dominant process at low temperatures, indicating a high quality of PMOCVD grown quaternary AlInGaN MQWs and establishing them as promising structures for the active region of deep ultraviolet light emitting diodes. [ABSTRACT FROM AUTHOR]

Low-temperature photoluminescence investigations have been carried out in the quaternary AlInGaN epilayers and AlInGaN/AlInGaN multiple quantum wells (MQWs) grown by pulsed metalorganic chemical-vapor deposition (PMOCVD). With increasing excitation power density, the emission peaks in both AlInGaN epilayers and MQWs show a strong blueshift and their linewidths increase. The luminescence of the samples grown by PMOCVD is attributed to recombination of carriers/excitons localized at band-tail states. We also demonstrate the luminescence properties of AlInGaN and A1GaN materials grown by a pulsed atomic-layer epitaxy and conventional MOCVD, respectively. [ABSTRACT FROM AUTHOR]