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Room-temperature optically pumped laser emission from a-plane GaN with high optical gain characteristics.
- Source :
-
Applied Physics Letters . 4/19/2004, Vol. 84 Issue 16, p2998-3000. 3p. 1 Diagram, 3 Graphs. - Publication Year :
- 2004
-
Abstract
- Photoluminescence (PL) and optical gain (OG) spectra of a-plane GaN layers have been analyzed over a wide range of excitation intensities. The samples were fully coalesced layers grown by metalorganic chemical vapor deposition over r-plane sapphire substrates using epitaxial layer overgrowth (ELOG) and selective area lateral epitaxy (SALE) procedures. ELOG and SALE a-plane samples showed a strong stimulated emission line in backscattering-geometry PL spectra along with extremely high OG coefficient values (in SALE samples more than 2000 cm-1). Structures prepared with natural cleaved facet cavities based on these films were used to demonstrate optically pumped room-temperature lasing. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]
- Subjects :
- *PHOTOLUMINESCENCE
*CHEMICAL vapor deposition
*SAPPHIRES
*EPITAXY
*TEMPERATURE
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 84
- Issue :
- 16
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 12817109
- Full Text :
- https://doi.org/10.1063/1.1711169