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Near infrared light-emitting diode (LED) based on p-NiO/n-InN/n-GaN was realized by plasma-assisted molecular beam epitaxy (PAMBE) combined with radio frequency (rf) magnetron sputtering. The device exhibited diode-like rectifying current–voltage characteristics with a turn-on voltage of 1.0 V. Under forward bias, prominent near infrared (NIR) emissions were observed at peak around 1570 nm at room temperature. The NIR emission was ascribed to the band-edge emission of InN epilayer based on the photoluminescence spectrum and band diagram of the heterojunction. Moreover, the study of the LED in terms of the stability was also discussed. [ABSTRACT FROM AUTHOR]

The n-InN/p-NiO/GaN heterojunction was fabricated by using plasma-assisted molecular beam epitaxy (PAMBE) combined with radio frequency magnetron sputtering. The device exhibited typical rectification characteristic with a turn-on voltage of ~1.5 V. Under forward bias, a dominant near infrared emission (NIR) peaked around 1565 nm was detected at room temperature. The NIR emission was attributed to the band-edge emission of InN film according to the photoluminescence spectrum of InN layer. Furthermore, the mechanism of the current transport and light emission was tentatively discussed in terms of the band diagrams of the heterojunction. [ABSTRACT FROM AUTHOR]

We fabricated the light-emitting diodes (LEDs) consisting of n-InN/p-NiO/p-Si heterostructure by using plasma-assisted molecular beam epitaxy (PAMBE) combined with radio frequency (RF) magnetron sputtering. The device exhibited diode-like rectifying current–voltage characteristics and had a turn-on voltage of 2.0 V. Under forward bias, a prominent narrow near infrared (NIR) emission peaked around 1565 nm was observed at room temperature. The NIR emission was demonstrated to come from the band-edge emission of InN layer. Moreover, the study of the LED in terms of the stability and efficiency were also discussed in detail. [ABSTRACT FROM AUTHOR]

The NiO films were prepared on GaN substrate by depositing an InN epilayer on GaN by plasma-assisted molecular beam epitaxy (PAMBE) and then growing NiO films on InN epilayer by radio frequency (rf) magnetron sputtering. We studied the effect of InN epilayers on structure, surface morphology, electrical and optical properties of NiO films using X-ray diffraction (XRD), scanning electron microscopy (SEM), Hall and optical absorption measurement. It was found that the NiO films grown with InN epilayer exhibited better crystalline qualities with more coalescent surface morphologies and an enhancement of the electrical properties. Moreover, the effect of vacuum annealing on the crystalline qualities of the NiO films was also investigated. [ABSTRACT FROM AUTHOR]

InN epilayers were deposited on nitrided sapphire substrates using plasma-assisted molecular beam epitaxy (PAMBE) system. The physical properties of InN films under different growth temperatures were thoroughly studied. The XRD results indicated that as-prepared InN films without Indium droplets were preferentially oriented in the c-axis direction. The SEM results showed that the InN films grown in a two-dimensional mode with a thickness of ∼200 nm under the growth temperature of 460 °C. In addition, the optical absorption measurement exhibited that the energy bandgap of InN films was around 0.75–0.81eV and the PL spectra of the epilayers revealed an infrared emission. Moreover, the electrical properties of the films were discussed by Hall effect in detail. [ABSTRACT FROM AUTHOR]

InN epilayers were prepared on c -plane (0001) sapphire substrates by plasma-assisted molecular beam epitaxy (PAMBE). We studied the effect of nitridation on structure, surface morphology, electrical and optical properties of InN films using X-ray diffraction (XRD), Reflection high-energy electron diffraction (RHEED), scanning electron microscopy (SEM), atomic force microscopy (AFM), Hall and photoluminescence (PL) measurement. The results showed a significant improvement of the crystalline qualities and surface morphologies and enhancement of the electrical and optical properties for InN films grown after nitridation. Moreover, the energy band-gap of InN films were also determined by optical absorption and photoluminescence (PL) measurement. [ABSTRACT FROM AUTHOR]