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Herein we report results of studies on stability of diodes based on organic semiconductors such as poly (3-hexylthiophene) (P3HT) and soluble derivative of polyazomethine poly(1,4-(2,5-bisoctyloxy phenylenemethylidynenitrilo)- 1,4-phenylenenitrilomethylidyne), (BOO-PPI). Both polymers were deposited on glass/ITO substrate with or without covering with blocking layer: poly(3,4-ethylenedioxythiophene):poly(4-styrene sulfonate) (PEDOT:PSS) and finished with Al back electrode. Prepared devices were studied by monitoring their electrical conductivity under nitrogen atmosphere and ambient air conditions. Under nitrogen atmosphere a marked influence of presence of the blocking layer on the diodes electrical conductivity was revealed. The P3HT diodes prepared without PEDOT:PSS thin film shown quick degradation, whereas presence of these layers stabilizes electrical conductivity in these devices. Inversely, the PPI based diodes without the PEDOT:PSS revealed stable conducting properties, while corresponding diodes with PEDOT:PSS layer showed degradation traces of their conducting properties. [ABSTRACT FROM AUTHOR]

In this article, we present the research on the influence of the composition of thin films of a blend of poly (3-hexylthiophene −2,5-diyl) - P3HT with fullerene derivatives [6,6]-phenyl-C71-butyric acid methyl ester – PC70BM and [6,6]-phenyl-C61-butyric acid methyl ester – PC60BM on their thermal transitions. The influence of molar mass (Mw) of P3HT (Mw = 65.2; 54.2 and 34.1 kDa) and PCBM (PC60BM – Mw = 911 g/mol and PC70BM – Mw = 1031 g/mol) is examined in details. The article presents significantly expanded research compared to our previous work on thermal transitions in thin films of blend P3HT (Mw = 65.2 kDa) with PC60BM. For this reason, we also compare current results with previous ones. Here, we present for the first time a phase diagram of thin films of the P3HT(Mw = 65.2 kDa):PC70BM blend using variable-temperature ellipsometry. Our research reveals the presence of characteristic temperatures of pure phases in thin films of P3HT: PCBM blends. It turns out that the cold crystallization temperature of the P3HT phase in P3HT(Mw = 65.2 kDa):PC70BM blend films is lower than corresponding temperature in P3HT(Mw = 65.2 kDa):PC60BM blend films. At the same time, the cold crystallization temperature of the PC70BM phase behaves inversely. We demonstrate also that variable-temperature spectroscopic ellipsometry is a very sensitive technique for studying thermal transitions in these thin films. In addition, we show that the entire phase diagram can be determined based on the raw ellipsometric data analysis, e.g. using a delta angle at wavelength λ = 280 nm. • The composition of thin films of a blends of P3HT with PC70BM influences their thermal transitions. • Variable-temperature spectroscopic ellipsometry is a sensitive technique for studying thermal transitions in P3HT:PCBM films. • The cold crystallization of PC70BM phase in P3HT:PC70BM blend occurs at higher temperature than for PC60BM in P3HT:PC60BM. • Phase diagram preparation and characteristic temperatures identification is possible on the base of ellipsometric data. [ABSTRACT FROM AUTHOR]