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Stability of Diodes with Poly(3-hexylthiophene) and Polyazomethines Thin Organic Layer.
- Source :
- Acta Physica Polonica: A; Dec2012, Vol. 122 Issue 6, p1083-1086, 4p, 4 Color Photographs
- Publication Year :
- 2012
-
Abstract
- Herein we report results of studies on stability of diodes based on organic semiconductors such as poly (3-hexylthiophene) (P3HT) and soluble derivative of polyazomethine poly(1,4-(2,5-bisoctyloxy phenylenemethylidynenitrilo)- 1,4-phenylenenitrilomethylidyne), (BOO-PPI). Both polymers were deposited on glass/ITO substrate with or without covering with blocking layer: poly(3,4-ethylenedioxythiophene):poly(4-styrene sulfonate) (PEDOT:PSS) and finished with Al back electrode. Prepared devices were studied by monitoring their electrical conductivity under nitrogen atmosphere and ambient air conditions. Under nitrogen atmosphere a marked influence of presence of the blocking layer on the diodes electrical conductivity was revealed. The P3HT diodes prepared without PEDOT:PSS thin film shown quick degradation, whereas presence of these layers stabilizes electrical conductivity in these devices. Inversely, the PPI based diodes without the PEDOT:PSS revealed stable conducting properties, while corresponding diodes with PEDOT:PSS layer showed degradation traces of their conducting properties. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 05874246
- Volume :
- 122
- Issue :
- 6
- Database :
- Complementary Index
- Journal :
- Acta Physica Polonica: A
- Publication Type :
- Academic Journal
- Accession number :
- 88995266
- Full Text :
- https://doi.org/10.12693/APhysPolA.122.1083