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The effect of biaxial strain on O-doped monolayers MoS2 has been systematically studied by the first-principles calculations. It is shown that the strain decreases the structural stability of O-doped monolayer MoS2. Between 0% and 12% tensile strains, the bandgap steadily narrows. At different compression strains, the bandgap increases and then decreases. The optical properties analysis shows that the strain causes the peaks of both the real and imaginary parts of the dielectric function to appear in the low energy region. And it affects the absorption and reflection peaks of the doping system so that it has a strong absorption of photons in the ultraviolet region. The doping system shows resonance in the range of 0–10 eV. The results of this study verify that strain can properly regulate the electronic and optical properties of O-doped monolayer MoS2, and provide a theoretical reference for the implementation of MoS2 in optoelectronic devices. [ABSTRACT FROM AUTHOR]

The effects of tensile and compressive deformation on the structural stability, electronic structure and optical properties of the Zn atom-adsorbed borophene system, which are exhibited by reflectivity, absorption coefficient, bandgap and adsorption energy, were studied using the first-principles calculations based on density functional theory (DFT). The borophene planes were found to be distorted following Zn atom adsorption. The adsorption energy calculations show that the stability decreases both under tensile and compressive strains. When tensile and compressive loading increase to 5%, respectively, the system loses the stability and the ability of adsorbing Zn atoms on borophene. The band structure and density of states analysis show that the band structure of borophene is changed by the Zn atom adsorption, with a band overlap near the Fermi level and more impurity energy levels in the conduction band. The hybridization is formed between Zn atom and borophene in the range of –12 eV to 6 eV, with the s and p orbitals both contributing to the conduction and valence bands, but p orbitals make a larger contribution to the total density of states than s orbitals. Studies of optical properties have shown that tensile and compressive strains both increase the dielectric constant of the adsorbed system, with compressive strains causing a redshift in the major peaks of the real and imaginary parts of the spectrum. The tensile strain has little effect on the absorption coefficient and reflectance of the borophene. As the compressive strain increases, the peak absorption coefficient of the adsorbed system is shifted to the blue and the peak reflectance is redshifted. [ABSTRACT FROM AUTHOR]

The electronic and optical properties of hydrogenated silicene at different torsion angles are investigated using the density functional theory (DFT). It was found that when silicene was hydrogenated, the Si atoms were pulled out of plane due to covalent interactions between the Si and H atoms, increasing their flexural height to 0.731 Å. Torsional deformation decreases the structural stability of hydrogenated silicene and its adsorption energy decreases with increasing twist angle. Under the effect of torsion deformation, the bandgap of hydrogenated silicene increases and then decreases. The bandgap is 2.168 eV at a torsion angle of 0∘, indicating a wide bandgap semiconductor. Mulliken's charge population analysis shows that charge transfer occurs between Si–H atoms, with Si atoms losing electrons and becoming positively charged and H atoms gaining electrons and becoming negatively charged. From the analysis of optical properties, the torsional deformation induced the maximum absorption and reflection peaks of all the hydrogenated silicene systems to appear in the ultraviolet region. Compared with the system without torsional deformation, these peaks exhibit varying degrees of red and blue shifts. The above findings provide guidance for the application of silicene in nanooptoelectronic devices. [ABSTRACT FROM AUTHOR]

The effect of biaxial strain on O-doped monolayers MoS2 has been systematically studied by the first-principles calculations. It is shown that the strain decreases the structural stability of O-doped monolayer MoS2. Between 0% and 12% tensile strains, the bandgap steadily narrows. At different compression strains, the bandgap increases and then decreases. The optical properties analysis shows that the strain causes the peaks of both the real and imaginary parts of the dielectric function to appear in the low energy region. And it affects the absorption and reflection peaks of the doping system so that it has a strong absorption of photons in the ultraviolet region. The doping system shows resonance in the range of 0–10 eV. The results of this study verify that strain can properly regulate the electronic and optical properties of O-doped monolayer MoS2, and provide a theoretical reference for the implementation of MoS2 in optoelectronic devices. [ABSTRACT FROM AUTHOR]

With the development of industrialization, the use of mercury in industry has become more and more widespread, causing serious impacts on the environment. It is therefore urgent to find new effective ways to combat mercury pollution. In this paper, The effect of C, O, P, Ni and Au doping on the adsorption of Hg atoms by WS 2 has been investigated based on the first nature principle of density functional theory. The electronic structures and optical properties of the adsorbed systems were calculated after atomic doping. The results show that the absolute value of the adsorption energy of the intrinsic adsorption system is small and does not favour the adsorption of Hg on WS 2. However, after C, P, Ni and Au doping, the adsorption energy of the system is significantly increased and a strong charge transfer between WS 2 and Hg atoms occurs, as well as a significant change in the band gap of the structure. This suggests that atomic doping favors the adsorption of Hg by WS 2. The effect of O doping on the adsorption system is not significant. In addition, a study of the optical properties revealed that the static dielectric constants of the system appeared to increase to varying degrees after the doping of the atoms. The doping of P, Ni and Au atoms increases the light absorption coefficient and contributes to the photocatalytic efficiency of the structures. The doped atoms cause a red shift in the reflectivity peak of the adsorbed system. In summary, the doping of C, P, Ni and Au enhances the adsorption of Hg atoms on WS 2. O doping has less effect on the adsorption of Hg on WS 2. • In this paper, the effect of C, O, P, Ni and Au doping on the adsorption of Hg atoms by WS2 was investigated. • The results show that atomic doping favors the adsorption of Hg by WS2. • Atomic doping alters the electronic properties of the structure. • Atomic doping alters the optical properties of the structure. [ABSTRACT FROM AUTHOR]

• Shear deformation reduces the structural stability of the doped system. The forbidden band width of the doped system decreases sequentially with increasing shear deformation, while conductivity increases. • The density of states of both intrinsic and doped systems is primarily contributed by the 4d and 3p orbitals of the Mo and S atoms, respectively. • Analysis of the optical properties reveals that shear deformation enhances the static permittivity of the doped systems, leading to an increased ability to bind charges. • Compared to the doped system without shear deformation, absorption peaks of the remaining doped systems shift towards the high energy region, resulting in enhanced utilization of ultraviolet light. The effect of O-atom doping on the electronic and optical properties of monolayer MoS 2 under shear deformation has been systematically investigated using first principles. The results show that shear deformation reduces the structural stability of the doped system. The forbidden band width of the doped system decreases sequentially with increasing shear deformation, while conductivity increases. The density of states of both intrinsic and doped systems is primarily contributed by the 4d and 3p orbitals of the Mo and S atoms, respectively. Analysis of the optical properties reveals that shear deformation enhances the static permittivity of the doped systems, leading to an increased ability to bind charges. Additionally, absorption and reflection peaks of all doped systems occur in the ultraviolet region. Compared to the doped system without shear deformation, absorption peaks of the remaining doped systems shift towards the high energy region, resulting in enhanced utilization of ultraviolet light. In the energy range of 16.7–17.3 eV, peak energy loss of all doped systems decreases sequentially, suggesting that shear deformation can reduce energy loss. These results demonstrate that shear deformation can modulate the optoelectronic properties of O-doped monolayer MoS 2 and provide a theoretical foundation for practical applications in semiconductor devices. Variation of band gap values of intrinsic and O-doped monolayer MoS 2 under different shear deformation [Display omitted] [ABSTRACT FROM AUTHOR]

First-principles research has been used to carefully examine the structural stability of the architecture, electronic structure, and optical characteristics of monolayer WS2-doped Mo atoms during shear deformation. Calculations show that the required formation energy gradually increases when shear deformation is increased from 2% to 8%, the bandgap of the system decreases from 1.732eV to 0.922eV, and the static dielectric function increases from 2.59 to 2.74. The absorption peaks are maximum for all doped systems between 11.5eV and 12.5eV. The peak absorption of the deformed system is redshifted compared to the original doped system. With increasing shear deformation, the peak energy loss of the system shows a decrease followed by an increase. [ABSTRACT FROM AUTHOR]

In the present paper, the effect of different bent angles on structural stability, electronic structure, and optical properties of Na absorbed borophene system is investigated using the density functional theory. The structure of the borophene was almost unchanged and the planar structure was not disrupted after the adsorption of a Na atom. Directly above the bottom B–B bonds is considered as the optimal adsorption position of single. The stability of the Na adsorbed borophene system can be decreased under the condition of different bent angles. The adsorption of Na atoms changes the energy band structure of the intrinsic borophene according to the calculation results of energy band structure and density of states, which resulting the conduction band contains more impurities. The 2p orbital of Na and the 3p orbital of B hybridize between −4 eV and 6 eV. Bending deformation gives rise to the electron transfer between Na atoms and B atoms. In terms of optical properties, the bending deformation improves the absorption of infrared light and the catalytic activity of light in the adsorbed system. • The structure of the borophene was almost unchanged and the planar structure was not disrupted after the adsorption of a Na atom. • The stability of the Na adsorbed borophene system can be decreased under the condition of different bent angles. • The adsorption of Na atoms changes the energy band structure of the intrinsic borophene so that its conduction band contains more impurities. • The bending deformation improves the absorption of infrared light and the catalytic activity of light in the adsorbed system. [ABSTRACT FROM AUTHOR]

Yb 2 O 3 :Ho 3+ nanocrystalline powders were synthesized through a solid state reaction method. X-ray diffraction analysis and field emission scanning electron microscopy were used to analyze the phase composition and morphology of the powders. Then under the 980 nm excitation of laser diode, the fluorescence of the crystals was studied via a fluorescence spectrometer. The green and red emissions centered on 551 and 668 nm were observed, and the green band dominated the emission spectrum. The effect of the concentration of Ho 3+ on the upconversion luminescence intensity was discussed and the possible upconversion emission mechanism was explained. It indicates that like other metal oxide nanoparticles, Yb 2 O 3 could also be a potential host material for doping to prepare the upconversion phosphor. [ABSTRACT FROM AUTHOR]

SrAl 2 O 4 :Eu 3+ down-conversion (DC) nanocrystals were synthesized by a sol–gel method and then doped in TiO 2 as a photoanode in dye-sensitized solar cells (DSSCs). Differential thermal analysis, fourier transform infrared spectroscopy, X-ray diffraction and Brunauer–Emmet–Teller analysis confirmed the formation of SrAl 2 O 4 :Eu 3+ nanocrystals with diameters of ∼47 nm, pore size of ∼25 nm, sintering temperature of 1300 °C. The photoluminescence and UV–vis absorption spectra of the SrAl 2 O 4 :Eu 3+ revealed a DC from ultraviolet light to visible light which matched the strong absorbing region of the N719 dye. The photoelectric conversion efficiency of the DSSCs with a TiO 2 photoanode doped with 3 wt% SrAl 2 O 4 :Eu 3+ was 20% higher than that with a pure TiO 2 photoanode. This phenomenon could be mainly explained by SrAl 2 O 4 :Eu 3+ nanocrystals’ ability of DC and increased the short-circuit current density. It could be minorly due to the p-type doping effect and slightly improved the open-circuit voltage. [ABSTRACT FROM AUTHOR]

Abstract: Fe-doped hydrogenated amorphous carbon (a-C:H:Fe) films were deposited from an isobutene/ferrocene/H2 gas mixture by plasma enhanced chemical metal organic vapor deposition. Raman spectra were used to characterize the bonding structure of the a-C:H:Fe films and hydrogenated amorphous carbon (a-C:H) films. Optical properties were investigated by the UV–vis spectroscopy and the photoluminescence spectra. The number of six-numbered rings of the a-C:H films increases and sp 2 clustering of the films decreases after Fe-doping. The Tauc optical gap of the a-C:H:Fe films becomes narrower by 0.15–0.23eV relative to the value of the a-C:H films. The narrowing of the optical gap after doping is attributed primarily to the extended state around the Fe deep level in the band gap and the narrowing of the π and π* band edge states because of the increase of the number of six-numbered rings in the a-C:H films. Fe deep level defects of the a-C:H:Fe films contribute chiefly to non-radiative recombination. [Copyright &y& Elsevier]