Effect of shear deformation on electronic and optical properties of monolayer WS2-doped Mo atoms.

First-principles research has been used to carefully examine the structural stability of the architecture, electronic structure, and optical characteristics of monolayer WS2-doped Mo atoms during shear deformation. Calculations show that the required formation energy gradually increases when shear deformation is increased from 2% to 8%, the bandgap of the system decreases from 1.732eV to 0.922eV, and the static dielectric function increases from 2.59 to 2.74. The absorption peaks are maximum for all doped systems between 11.5eV and 12.5eV. The peak absorption of the deformed system is redshifted compared to the original doped system. With increasing shear deformation, the peak energy loss of the system shows a decrease followed by an increase. [ABSTRACT FROM AUTHOR]