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In this study, an advanced supercritical fluid (SCF) technique that is suitable for materials and electronic devices with low temperature (80 °C) and high pressure (4000 psi) is proposed for a ZnO-based resistive random access memory (RRAM). After an SCF treatment, X-ray photoelectron spectroscopy (XPS) analysis confirms that the concentration of oxygen ions increases in the zinc oxide thin film. Moreover, electrical measurements confirm that the treated ZnO-based random access memory exhibits a lower forming voltage, lower set voltage, and higher ratio of high and low resistance states compared with a device without treatment. Next, the carrier transport mechanism is investigated by fitting the current–voltage curves. Finally, physical models are introduced to illustrate the extra oxygen ions that create better memory characteristics in the random access memory device after the SCF treatment. This significant SCF technique increases the content of oxygen ions without altering the original element ratio and maintains a simple device structure. Thus, the technique shows potential for feasible material improvement capable of effective real applications in the near future. [ABSTRACT FROM AUTHOR]

In this study, a one transistor one resistor (1T1R) structure combining a fin‐like low‐temperature polycrystalline‐silicon (LTPS) transistor and a resistive random access memory (RRAM) is successfully fabricated. For the fin‐like LTPS transistor, both n‐type and p‐types show excellent electrical output characteristics. Fin‐like structure produces more stable output characteristics. Also, the forming and current–voltage (I–V) characteristics are measured in this study, and the RRAM exhibits a forming voltage of about −1.9 V. As for the I–V switching property, the devices are stable and show excellent performance, with the set and reset voltages showing only minimal change over 100 cycles. Moreover, combining the fin‐like LTPS transistor and RRAM into a 1T1R structure results in favorable operation over 100 cycles, with excellent retention and endurance. According to these results, RRAM can be successfully combined with a fin‐like LTPS transistor for application in current integrated circuit processes without difficulty. [ABSTRACT FROM AUTHOR]

In this letter, the electrical characteristics of Ti/HfO2/TiN resistive random access memory (RRAM) were thoroughly investigated. An abnormal current degradation was seen in the DC sweeping cycle. Both the on-state and off-state current clearly exhibited degradation with time. Next, current fitting analysis was used to investigate the carrier transport mechanisms. The results indicate that the on-state carrier transport mechanism changed from space-charge-limited current into hopping conduction after cycle sweeping. However, the off-state current changes from Schottky thermal emission to hopping conduction. Based on comparisons of different Schottky distances and Schottky barriers, physical models were proposed to explain the abnormal current degradation behavior. Finally, COMSOL electric field simulations were used to show the electric field distribution around the conducting filament (CF), and the conducting model was subsequently verified. [ABSTRACT FROM AUTHOR]

Herein, the supercritical hydrogen treatment is proposed to improve the performance of zinc oxide‐based resistive random access memory. After treatment, the treated device not only achieves the forming‐free characteristic but also gets enhanced in its memory window, reset voltage, and reliability. Moreover, X‐Ray photoelectron spectroscopy analysis confirms the forming‐free characteristic of the treated device since the treatment decreases the concentration of ZnO bonding in the zinc oxide thin film, leading the conductive filament to be constructed in the zinc oxide switching layer. Next, the carrier transport mechanism is investigated by fitting current–voltage curves. Finally, the physical models based on the electrical properties and the material analyses are introduced to illustrate the oxygen ions and hydroxide ions that create the forming‐free characteristic and better memory characteristics in the random access memory device after the supercritical fluid treatment. Hence, this method demonstrates the promising practical and effective utilization of enhancing memory devices, in the future. [ABSTRACT FROM AUTHOR]