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Focuses on a study which reinvestigated the steady-state Nyquist theorem for multi-terminal semiconductor devices and its application to minimum noise figure in microwave field effect transistors. Discussion on the existing thermal noise theories for multi-terminal semiconductor devices; Methodology of the study; Results and discussion.

Presents a study which derived an equivalent noise source with a useful functional form for Boltzmann transport equations from the classical expression of the noise source. Methods used in understanding the noise phenomena in semiconductor devices; Mathematical expression for n-type nondegenerate semiconductor; Discussion on the controversy over correctness of an equation of the spectral intensity of the noise source.