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InGaAs gate-all-around metal-oxide-semiconductor field-effect transistors (MOSFETs) with 6 nm nanowire thickness have been experimentally demonstrated at sub-80 nm channel length. The effects of forming gas anneal (FGA) on the performance of these devices have been systematically studied. The 30 min \(400^{\circ}C\) FGA \((4\%H_2/96\%N_2)\) is found to improve the quality of the \(Al_2O_3/InGaAs\) interface, resulting in a subthreshold slope reduction over 20 mV/dec (from 117 mV/dec in average to 93 mV/dec). Moreover, the improvement of interface quality also has positive impact on the on-state device performance. A scaling metrics study has been carried out for FGA treated devices with channel lengths down to 20 nm, indicating excellent gate electrostatic control. With the FGA passivation and the ultra-thin nanowire structure, InGaAs MOSFETs are promising for future logic applications., Chemistry and Chemical Biology

High-performance InGaAs gate-all-around (GAA) nanowire MOSFETs with channel length (Lch) down to 20 nm are fabricated by integrating a higher k~LaAlO3-based gate-stack with an equivalent oxide thickness of 1.2 nm. It is found that inserting an ultrathin (0.5 nm) Al2O3 interfacial layer between the higher k~LaAlO3 and InGaAs can significantly improve the interface quality and reduce device variation. As a result, a record low subthreshold swing of 63 mV/dec is demonstrated at sub-80-nm Lch for the first time, making InGaAs GAA nanowire devices a strong candidate for future low-power transistors. [ABSTRACT FROM AUTHOR]

InGaAs gate-all-around nanowire MOSFETs with channel length down to 50 nm have been experimentally demonstrated by a top-down approach. The nanowire size-dependent transport properties have been systematically investigated. It is found that reducing nanowire dimension leads to higher on-current, transconductance, and effective mobility due to stronger quantum confinement and the volume-inversion effect. TCAD quantum mechanical simulation has been carried out to study the inversion charge distribution inside the nanowires. Volume-inversion effect appears at a larger dimension for InGaAs nanowire MOSFET than its Si counterpart. [ABSTRACT FROM AUTHOR]