Variability Improvement by Interface Passivation and EOT Scaling of InGaAs Nanowire MOSFETs.

High-performance InGaAs gate-all-around (GAA) nanowire MOSFETs with channel length (Lch) down to 20 nm are fabricated by integrating a higher k~LaAlO3-based gate-stack with an equivalent oxide thickness of 1.2 nm. It is found that inserting an ultrathin (0.5 nm) Al2O3 interfacial layer between the higher k~LaAlO3 and InGaAs can significantly improve the interface quality and reduce device variation. As a result, a record low subthreshold swing of 63 mV/dec is demonstrated at sub-80-nm Lch for the first time, making InGaAs GAA nanowire devices a strong candidate for future low-power transistors. [ABSTRACT FROM AUTHOR]