Search

This work studies the self-heating (SH) effect in ultra-thin body ultra-thin buried oxide (UTBB) FDSOI MOSFETs at cryogenic temperatures down to 77 K. S-parameter measurements in a wide frequency range, with the so-called RF technique, are employed to assess SH parameters and related variation of analog figures of merit (FoMs) at different temperatures. Contrary to the expectations, the effect of self-heating on analog FoMs is slightly weaker at cryogenic temperatures with respect to room-temperature case. The extracted thermal resistance and channel temperature rise at 300 K and 77 K in short-channel devices are of the same order of magnitude. The observed increase in SH characteristic frequency with temperature reduction emphasizes the advantage of the RF technique for the fair analysis of SH-related features in advanced technologies at cryogenic temperatures.

Compact models for MOS devices are extremely useful as they can be incorporated in circuit simulators with sufficient accuracy. We present for the first time a 2-D surface-potential-based compact model for the drain current of nanoscale germanium-on-insulator (GeOI) MOSFETs including the interface-trapped and fixed-oxide charge densities at both front- and back-gates. The proposed drain current model is accurate, computationally efficient, and suitable for circuit simulation in the nanometer regime because no iterative loop is used anywhere. The drain current model includes velocity saturation, channel length modulation, carrier mobility degradation, and also the drain-induced barrier lowering. The model shows excellent concordance with the reported experimental transfer characteristic curves for both the high and low drain voltages and also exhibits good agreement for derivatives of drain current when compared with our TCAD simulation data for GeOI devices with channel length of 30 nm over a wide range of gate and drain bias conditions. Furthermore, our studies reveal that GeOI devices outperform silicon-on-insulator (SOI) counterparts in terms of analog figures of merit, such as transconductance, voltage gain, transconductance generation factor, and cut-off frequency, except the output conductance. [ABSTRACT FROM AUTHOR]