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Self-Heating in FDSOI UTBB MOSFETs at Cryogenic Temperatures and Its Effect on Analog Figures of Merit
Self-Heating in FDSOI UTBB MOSFETs at Cryogenic Temperatures and Its Effect on Analog Figures of Merit
- Source :
- I E E E Journal of the Electron Devices Society, Vol. 8, p. 789-796 (2020), IEEE Journal of the Electron Devices Society, Vol 8, Pp 789-796 (2020)
- Publication Year :
- 2020
- Publisher :
- Institute of Electrical and Electronics Engineers, 2020.
-
Abstract
- This work studies the self-heating (SH) effect in ultra-thin body ultra-thin buried oxide (UTBB) FDSOI MOSFETs at cryogenic temperatures down to 77 K. S-parameter measurements in a wide frequency range, with the so-called RF technique, are employed to assess SH parameters and related variation of analog figures of merit (FoMs) at different temperatures. Contrary to the expectations, the effect of self-heating on analog FoMs is slightly weaker at cryogenic temperatures with respect to room-temperature case. The extracted thermal resistance and channel temperature rise at 300 K and 77 K in short-channel devices are of the same order of magnitude. The observed increase in SH characteristic frequency with temperature reduction emphasizes the advantage of the RF technique for the fair analysis of SH-related features in advanced technologies at cryogenic temperatures.
- Subjects :
- analog figures of merit
Materials science
Thermal resistance
Silicon on insulator
02 engineering and technology
Cryogenics
01 natural sciences
UTBB
MOSFET
0103 physical sciences
Figure of merit
S-parameters
Electrical and Electronic Engineering
010302 applied physics
FDSOI
Self-heating
Analog figures of merit
business.industry
self-heating
021001 nanoscience & nanotechnology
Electronic, Optical and Magnetic Materials
Optoelectronics
lcsh:Electrical engineering. Electronics. Nuclear engineering
Radio frequency
0210 nano-technology
business
Self heating
lcsh:TK1-9971
Order of magnitude
Biotechnology
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- I E E E Journal of the Electron Devices Society, Vol. 8, p. 789-796 (2020), IEEE Journal of the Electron Devices Society, Vol 8, Pp 789-796 (2020)
- Accession number :
- edsair.doi.dedup.....6e895eaaec318f766bdf24c867937c5d