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Self-Heating in FDSOI UTBB MOSFETs at Cryogenic Temperatures and Its Effect on Analog Figures of Merit

Self-Heating in FDSOI UTBB MOSFETs at Cryogenic Temperatures and Its Effect on Analog Figures of Merit

Authors :
Jean-Pierre Raskin
Michel Haond
Arka Halder
Lucas Nyssens
Babak Kazemi Esfeh
Valeriya Kilchytska
Nicolas Planes
Denis Flandre
UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique
Source :
I E E E Journal of the Electron Devices Society, Vol. 8, p. 789-796 (2020), IEEE Journal of the Electron Devices Society, Vol 8, Pp 789-796 (2020)
Publication Year :
2020
Publisher :
Institute of Electrical and Electronics Engineers, 2020.

Abstract

This work studies the self-heating (SH) effect in ultra-thin body ultra-thin buried oxide (UTBB) FDSOI MOSFETs at cryogenic temperatures down to 77 K. S-parameter measurements in a wide frequency range, with the so-called RF technique, are employed to assess SH parameters and related variation of analog figures of merit (FoMs) at different temperatures. Contrary to the expectations, the effect of self-heating on analog FoMs is slightly weaker at cryogenic temperatures with respect to room-temperature case. The extracted thermal resistance and channel temperature rise at 300 K and 77 K in short-channel devices are of the same order of magnitude. The observed increase in SH characteristic frequency with temperature reduction emphasizes the advantage of the RF technique for the fair analysis of SH-related features in advanced technologies at cryogenic temperatures.

Details

Language :
English
Database :
OpenAIRE
Journal :
I E E E Journal of the Electron Devices Society, Vol. 8, p. 789-796 (2020), IEEE Journal of the Electron Devices Society, Vol 8, Pp 789-796 (2020)
Accession number :
edsair.doi.dedup.....6e895eaaec318f766bdf24c867937c5d