10 results on '"Tsatsul’nikov, A. F."'
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2. The Influence of Heat Treatment Conditions on the Evaporation of Defect Regions in Structures with InGaAs Quantum Dots in the GaAs Matrix.
3. The Emission from the Structures with Arrays of Coupled Quantum Dots Grown by the Submonolayer Epitaxy in the Spectral Range of 1.3–1.4μm.
4. Influence of growth conditions on the formation and luminescence properties of InGaAs quantum dots in a Si matrix.
5. Influence of composition and anneal conditions on the optical properties of (In, Ga)As quantum dots in an (Al, Ga)As matrix.
6. Arrays of strained InAs quantum dots in an (In Ga)As matrix, grown on InP substrates by molecular-beam epitaxy.
7. Influence of mismatch of the lattice parameters on the structural, optical, and transport properties of InGaAs layers grown by molecular beam epitaxy on InP(100) substrates.
8. Formation of two-dimensional islands in the deposition of ultrathin InSb layers on a GaSb surface.
9. GaAsN/GaAs and InGaAsN/GaAs heterostructures grown by molecular beam epitaxy.
10. InAs/InGaAsN quantum dots emitting at 1.55 μm grown by molecular beam epitaxy
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