GaAsN/GaAs and InGaAsN/GaAs heterostructures grown by molecular beam epitaxy.

Molecular beam epitaxy was used to fabricate GaAsN/GaAs and InGaAsN/GaAs heterostructures, and the influence of the growth regimes on their characteristics was studied. It is shown that implantation of nitrogen causes a substantial long-wavelength shift of the radiation. The possibility of obtaining 1.4 µm radiation at room temperature was demonstrated using In[sub 0.28]Ga[sub 0.72]As[sub 0.97]N[sub 0.03]/GaAs quantum wells. [ABSTRACT FROM AUTHOR]