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Your search keyword '"AlGaAsSb"' showing total 4 results
Start Over Descriptor "AlGaAsSb" Topic mid-infrared
4 results on '"AlGaAsSb"'

1. OMVPE growth of GaInAsSb/AlGaAsSb for quantum-well diode lasers.

Author

Wang, C. and Choi, H.

Abstract

GaInAsSb and AlGaAsSb alloys have been grown by organometallic vapor phase epitaxy (OMVPE) using all organometallic sources, which include tritertiarybutylaluminum, triethylgallium, trimethylindium, tertiarybutylarsine (TBAs), and trimethylantimony. Excellent control of lattice-matching both alloys to GaSb substrates is achieved with TBAs. GaInAsSb/AlGaAsSb multiple quantum well (MQW) structures grown by OMVPE exhibit strong 4K photoluminescence with full width at half maximum of 10 meV, which is comparable to values reported for quantum well (QW) structures grown by molecular beam epitaxy. Furthermore, we have grown GaInAsSb/AlGaAsSb MQW diode lasers which consist of n- and p-doped Al0.59Ga0.41As0.05Sb0.95 cladding layers, Al0.28Ga0.72As0.02Sb0.98 confining layers, and four 15 nm thick Ga0.87In0.13As0.12Sb0.88 quantum wells with 20 nm thick Al0.28Ga0.72As0.02Sb0.98 barrier layers. These lasers, emitting at 2.1 µm, have exhibited room-temperature pulsed threshold current densities as low as 1.2 kA/cm2. [ABSTRACT FROM AUTHOR]

Published
1997
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2. Interband type-II miniband-to-bound state diode lasers for the midinfrared

Author

Joachim Wagner, Markus Walther, C. Mermelstein, Rudolf Kiefer, Johannes Schmitz, and Publica

Subjects
Materials science, Physics and Astronomy (miscellaneous), GaInSb, law.invention, Semiconductor laser theory, Gallium arsenide, diode laser, chemistry.chemical_compound, Optics, AlGaAsSb, InAs, law, mittleres Infrarot, Quantenfilm, Diode, Übergitter, business.industry, Slope efficiency, superlattice, mid-infrared, Injection seeder, Laser, characteristic temperature, chemistry, charakteristische Temperatur, quantum-well, Optoelectronics, W-Laser, business, Current density, Diodenlaser, Molecular beam epitaxy
Abstract

A design for midinfrared diode lasers based on interband type-II miniband-to-bound state transitions is proposed and has been demonstrated experimentally. Type-II miniband-to-bound state laser structures emitting at 3.25 mu with active regions consisting of 5 and 10 W periods were grown by solid-source molecular-beam epitaxy and processed into ridge waveguide lasers. Substrate-side down mounted devices with a 10 period active region and uncoated facets could be operated in continuous-wave (cw) mode up to 185 K and as high as 260 K in pulsed mode. A high characteristic temperature of 100 K has been achieved for heat-sink temperatures below 140 K, decreasing to 33 K for the 140 to 185 K interval. At 110 K, a 5 period laser structure exhibited a threshold current density of 177 A/cm2and a slope efficiency of 61 mW/A. Single-ended output powers of 144 mW in cw mode and exceeding 330 mW in pulsed operation were obtained for a substrate-side down mounted 5 period diode laser with high-reflection/antireflection coated mirror facets, operated at 110 K.

Published
2004
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3. GaSb-based tapered diode lasers at 1.93 µm with 1.5-W nearly diffraction-limited power

Author

Pfahler, C., Kaufel, G., Kelemen, M.T., Mikulla, M., Rattunde, M., Schmitz, J., Wagner, J., and Publica

Subjects
high brightness, GaSb, AlGaAsSb, molecular beam epitaxy, mittleres Infrarot, Halbleiterlaser, hochbrillant, Molekularstrahlepitaxie, GaInAsSb, mid-infrared, Trapezlaser, semiconductor laser, tapered laser
Abstract

High-power high-brightness 1.93-µm wavelength (AlGaIn)(AsSb) tapered diode lasers with a narrow vertical waveguide design are reported for the first time. A nearly diffraction-limited continuous-wave output power of 1.5 W together with a remarkable low fast axis divergence of 43° full-width at half-maximum have been demonstrated. The maximum brightness amounts to 32 MW/cm2 sr.

Published
2006

4. Continuous-wave operation of GaInAs/AlGaAsSb quantum cascade lasers

Author

Quankui Yang, Klaus Köhler, Wolfgang Bronner, G. Kaufel, Christian Manz, Joachim Wagner, Ch. Mann, R. Moritz, and Publica

Subjects
Materials science, quantum cascade laser, Gallium arsenide, law.invention, chemistry.chemical_compound, Optics, Operating temperature, AlGaAsSb, law, mittleres Infrarot, Stimulated emission, Electrical and Electronic Engineering, Quantum, continuous-wave operation, Dauerstrichbetrieb, GaInAs, business.industry, mid-infrared, Laser, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Wavelength, chemistry, Cascade, Quantenkaskadenlaser, Continuous wave, Optoelectronics, business
Abstract

We report on the demonstration of continuous-wave (CW) operation of GaInAs-AlGaAsSb quantum cascade (QC) lasers. By placing a 2.5-/spl mu/m-thick gold layer on both sides of the laser ridge to extract heat from the active region in the lateral direction, together with mounting the device epilayer down, we have achieved CW operation of GaInAs-AlGaAsSb QC lasers composed of 25 stages of active/injection regions. The maximum CW operating temperature of the lasers is 94 K, and the emission wavelength is around /spl lambda//spl sim/4.65 /spl mu/m. For a device with the size of 10/spl times/2000 /spl mu/m/sup 2/, the CW optical output power per facet is 13 mW at 42 K and 4 mW at 94 K. The CW threshold current density is 1.99 kA/cm/sup 2/ at 42 K, and 2.08 kA/cm/sup 2/ at 94 K, respectively.

Published
2005

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