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OMVPE growth of GaInAsSb/AlGaAsSb for quantum-well diode lasers.

Authors :: Wang, C.
Choi, H.
Source :: Journal of Electronic Materials; Oct1997, Vol. 26 Issue 10, p1231-1236, 6p
Publication Year :: 1997
Abstract: GaInAsSb and AlGaAsSb alloys have been grown by organometallic vapor phase epitaxy (OMVPE) using all organometallic sources, which include tritertiarybutylaluminum, triethylgallium, trimethylindium, tertiarybutylarsine (TBAs), and trimethylantimony. Excellent control of lattice-matching both alloys to GaSb substrates is achieved with TBAs. GaInAsSb/AlGaAsSb multiple quantum well (MQW) structures grown by OMVPE exhibit strong 4K photoluminescence with full width at half maximum of 10 meV, which is comparable to values reported for quantum well (QW) structures grown by molecular beam epitaxy. Furthermore, we have grown GaInAsSb/AlGaAsSb MQW diode lasers which consist of n- and p-doped Al<subscript>0.59</subscript>Ga<subscript>0.41</subscript>As<subscript>0.05</subscript>Sb<subscript>0.95</subscript> cladding layers, Al<subscript>0.28</subscript>Ga<subscript>0.72</subscript>As<subscript>0.02</subscript>Sb<subscript>0.98</subscript> confining layers, and four 15 nm thick Ga<subscript>0.87</subscript>In<subscript>0.13</subscript>As<subscript>0.12</subscript>Sb<subscript>0.88</subscript> quantum wells with 20 nm thick Al<subscript>0.28</subscript>Ga<subscript>0.72</subscript>As<subscript>0.02</subscript>Sb<subscript>0.98</subscript> barrier layers. These lasers, emitting at 2.1 µm, have exhibited room-temperature pulsed threshold current densities as low as 1.2 kA/cm<superscript>2</superscript>. [ABSTRACT FROM AUTHOR]