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Your search keyword '"Adriyanto, Feri"' showing total 2 results
Start Over Author "Adriyanto, Feri" Topic metal oxide semiconductor field-effect transistors
2 results on '"Adriyanto, Feri"'

1. Closed Loop Control On Battery Charge Regulator Lead-Acid Using Switching Technique.

Author

Mustaqim, Abid Alim, Sujono, Augustinus, and Adriyanto, Feri

Subjects
METAL oxide semiconductor field-effect transistors, ELECTRIC batteries, SOLAR energy, SOLAR cells, FIELD effect transistor switches, LOW temperatures
Abstract

Battery Charge Regulator (BCR) is needed for the solar power system generation. But the battery is often easily damaged due to the excessive charging current and the high temperature. This may the effect of the solar panel voltage being fluctuating and the fickle battery condition. Therefore it is necessary to manufacture BCR with constand current, the excessive voltage, and perform charging at a safe temperature. In this research BCR was made with constant current charging method. Current control is done using the MOSFET switching technique. In order to a constant current, closed loop control is used with a current sensor as a feedback sensor. The duty cycle of switching is regulated through a microcontroller based on the current read by the sensor. In addition, a temperature sensor and a voltage sensor are used as a feedback sensor so that charging runs safely. The results of the experiment show success withthe constantly maintained current at 1.5 A and 2 A. The battery temperature is lower than 40°C. The charge voltage is lower than 14.7 V. And the battery voltage is lower than 13.8 V. [ABSTRACT FROM AUTHOR]

Published
2019
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2. AlGaN/GaN Metal–Oxide–Semiconductor High-Electron Mobility Transistor With Liquid-Phase-Deposited Barium-Doped \TiO2 as a Gate Dielectric.

Author

Hu, Chih-Chun, Lin, Mon-Sen, Wu, Tsu-Yi, Adriyanto, Feri, Sze, Po-Wen, Wu, Chang-Luen, and Wang, Yeong-Her

Subjects
METAL oxide semiconductor field-effect transistors, GALLIUM nitride, ALUMINUM, ELECTRON mobility, ELECTRON transport, TITANIUM dioxide films, BARIUM, GATE array circuits
Abstract

Barium-doped \TiO2 films deposited on GaN layers at low temperature through a simple liquid phase deposition method is investigated. The use as a gate dielectric in AlGaN/GaN metal–oxide–semiconductor high-electron mobility transistors (MOSHEMTs) is also demonstrated. The electrical characteristics of the MOS structure on n-doped GaN show that the leakage current density is about \5.09 \times \10^-9\ \A/cm^2 at 1 MV/cm, and the breakdown field is more than 13 MV/cm. The maximum drain current density of the AlGaN/GaN MOSHEMTs is higher than that of HEMTs, in which a wider gate voltage swing and a lower subthreshold swing (110 mV/decade) are obtained. The gate leakage current density is significantly improved, and the gate pulse measurement shows that the current collapse is more suppressed for MOSHEMTs. [ABSTRACT FROM PUBLISHER]

Published
2012
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