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A detailed analysis of hot-carrier effects in deep submicron N and P channel SOI MOSFETs is presented, for gate lengths down to 0.1 mum. The two-stage time dependence of degradation is also investigated to provide reliable lifetime prediction methods that can be used under various hot-carrier stress conditions. Saturation levels are reliant on gate length, thus degradation time dependence needs to be carefully determined.

There are close connections between the dose-induced threshold voltage shift of fully-depleted NMOS transistors and charge trapping in the buried oxide. Coupling between the front and back gate transistors is responsible for the significant shift in the fully-depleted SOI/NMOSFET which results from radiation-induced charge trapping in the buried oxide. Research indicates that the lateral parasitic transistor is more affected than the main active transistor by the buried oxide trapping.