1. Inhibition of Oxygen Scavenging by TiN at the TiN/SiO2 Interface by Atomic-Layer-Deposited Al2O3 Protective Interlayer
- Author
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S. Kasatikov, A. S. Konashuk, Sergei S. Sakhonenkov, Valeri Afanas'ev, and Elena O. Filatova
- Subjects
Technology ,Materials science ,PHOTOELECTRON-SPECTROSCOPY ,Materials Science ,VALENCE ,chemistry.chemical_element ,Materials Science, Multidisciplinary ,02 engineering and technology ,FILMS ,010402 general chemistry ,01 natural sciences ,Oxygen ,TITANIUM NITRIDE ,X-ray photoelectron spectroscopy ,SPECTRA ,Nanoscience & Nanotechnology ,Physical and Theoretical Chemistry ,Chemical composition ,Scavenging ,Science & Technology ,Chemistry, Physical ,021001 nanoscience & nanotechnology ,0104 chemical sciences ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Chemistry ,General Energy ,chemistry ,Chemical engineering ,X-RAY-ABSORPTION ,Physical Sciences ,THERMAL-OXIDATION ,Science & Technology - Other Topics ,0210 nano-technology ,Tin ,Layer (electronics) - Abstract
Chemical composition of interfaces between physical-vapor-deposited TiN and SiO2 as affected by introduction of a thin (0.5–3 nm) alumina interlayer was studied using photoelectron spectroscopy wit...
- Published
- 2019
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